Optoelectronic device

Patent metadata

Field	Value
Publication number	US-9324691-B2
Application number	US-83005910-A
Country	US
Kind code	B2
Filing date	Jul 2, 2010
Priority date	Oct 20, 2009
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

First claim

What is claimed is:

1. An optoelectronic device comprising:
a substrate;
grooves on the substrate;
a plurality of semiconductor units on the substrate and separated by the grooves, wherein each semiconductor unit comprises an edge, a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer;
a plurality of connecting parts crossing one of the grooves for connecting two of the plurality of semiconductor units, wherein the plurality of connecting parts are physically isolated from each other;
a first electrode comprising a plurality of first extensions physically isolated from each other and disposed on each first semiconductor layer, wherein the plurality of first extensions is spaced apart from the edge and connected to the plurality of connecting parts one by one; and
a second electrode comprising a plurality of second extensions physically connected to each other and disposed on each second semiconductor layer, wherein the plurality of second extensions is spaced apart from the edge and jointly connected to the plurality of connecting parts.

2. The optoelectronic device according to claim 1 , wherein a driving voltage of each semiconductor unit is substantially the same.

3. The optoelectronic device according to claim 1 , wherein the areas of the plurality of semiconductor units are substantially the same.

4. The optoelectronic device according to claim 1 , wherein the plurality of semiconductor units comprises two different rectangular shapes.

5. The optoelectronic device according to claim 1 , wherein one of the plurality of first extensions or one of the plurality of second extensions comprises a straight extension.

6. The optoelectronic device according to claim 1 , wherein one of the plurality of first extensions or one of the plurality of second extensions further comprises a secondary extension.

7. The optoelectronic device according to claim 1 , wherein each of the plurality of first extensions comprises a first curve extension and each of the plurality of second extensions comprises a second curve extension; the first curve extension and the second curve extension are not parallel to the edge of the semiconductor units.

8. The optoelectronic device according to claim 1 , wherein the first electrode further comprises a straight extension and the second electrode electrodes further comprises a straight extension.

9. The optoelectronic device according to claim 1 , wherein the plurality of semiconductor units comprises a first semiconductor unit, a second semiconductor unit and a third semiconductor unit, wherein the first electrode disposed on the first semiconductor unit and on a corner region of the substrate comprises a first pad, the second electrode disposed on the second semiconductor unit and on another corner region of the substrate comprises a second pad, and the first electrode and the second electrode disposed on the third semiconductor unit have no pad.

10. The optoelectronic device according to claim 9 , wherein the plurality of first extensions of the first electrode disposed on the first semiconductor unit is in contact with the first pad and/or the plurality of second extensions of the second electrode disposed on the second semiconductor unit is in contact with the second pad.

11. The optoelectronic device according to claim 1 , wherein one of the plurality of first extensions or one of the plurality of second extensions comprises a curve extension which is not parallel to the edge of the semiconductor unit.

12. The optoelectronic device according to claim 1 , wherein the plurality of first extensions and the plurality of second extensions are disposed on one of the plurality of semiconductor units, the first extension extends from a first edge of the one of the plurality of semiconductor units to a second edge opposite to the first edge, the plurality of second extensions extends from the second edge to the first edge of the one of the plurality of semiconductor units.

13. The optoelectronic device according to claim 1 , wherein the plurality of semiconductor units comprises a first, a second, a third and a fourth semiconductor units, the first and the second semiconductor units are arranged in a first column, and the third and the fourth semiconductor units are arranged in a second column adjacent to the first column.

14. The optoelectronic device according to claim 13 , wherein the first electrode comprises a fourth extension on the third semiconductor unit, the fourth extension extends from the first edge of the third semiconductor unit to the second edge of the third semiconductor unit.

15. The optoelectronic device according to claim 13 , wherein the layout of the first electrode and the second electrode on the first semiconductor unit is the same as the layout of the first electrode and the second electrode on the second semiconductor unit, and/or the layout of the first electrode and the second electrode on the third semiconductor unit is the same as the layout of the first electrode and the second electrode on the fourth semiconductor unit.

16. The optoelectronic device according to claim 13 , wherein the layout of the first electrode and the second electrode in the first column is different from the layout of the first electrode and the second electrode in the second column.

17. The optoelectronic device according to claim 13 , further comprising a plurality of first columns and second columns arranged on the substrate repeatedly.

18. The optoelectronic device according to claim 13 , wherein the number of the semiconductor units in the first column is different from that in the second column.

19. The optoelectronic device according to claim 13 , wherein the first and the second semiconductor units in the first column are connected in series in a first orientation, the third and the fourth semiconductor units in the second column are connected in series in a second orientation, and the first and second orientations are opposite.

20. The optoelectronic device according to claim 1 , further comprising an adhesive layer formed between the substrate and the plurality of semiconductor units.

21. An optoelectronic device comprising:
a substrate;
grooves on the substrate;
a plurality of semiconductor units comprising a first semiconductor unit and a second semiconductor unit disposed on the substrate and separated from each other by the grooves, wherein each of the plurality of semiconductor units comprises a rectangular shape, a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer;
a first electrode disposed on the first semiconductor layer, wherein the first electrode comprises a first extension;
a second electrode disposed on the second semiconductor layer, wherein the second electrode comprises a second extension;
wherein an electrode layout of the first electrode and the second electrode in the first semiconductor unit is different from an electrode layout of the first electrode and the second electrode in the second semiconductor unit and a first side of the first semiconductor unit is longer than a second side of the second semiconductor unit, and the first side of the first semiconductor unit is parallel to the second side of the second semiconductor unit; and
a connecting part formed between two of the plurality of semiconductor units to electrically co

Assignees

• Jing Chang-Huei
• Shen Chien-Fu
• Epistar Corp

Inventors

• Jing Chang-Huei
• Shen Chien-Fu

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H29/10

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title