Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-9324588-B2
Application number	US-201514625855-A
Country	US
Kind code	B2
Filing date	Feb 19, 2015
Priority date	Jul 17, 2014
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

First claim

What is claimed is:

1. A data analyzing method of an etching apparatus comprising the steps of:
generating a wavelength combination from wavelength band of plasma emission generated by etching a specimen;
setting a time interval for calculating an average value of emission intensity in a time period for etching the specimen with respect to each of the generated wavelength combinations;
calculating a prediction error upon prediction of an etching processing result using the emission intensity average value in the time interval with respect to each of the generated wavelength combinations; and
selecting a combination of wavelength and time interval, which exhibits a minimum value of the calculated prediction error, as the combination of wavelength and time interval used for predicting the etching processing result.

2. The data analyzing method of an etching apparatus according to claim 1 , wherein in the step of selecting a combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, a second prediction error is calculated by searching the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits a minimum value of the calculated second prediction error, is selected, as the combination of wavelength and time interval used for predicting the etching processing result.

3. The data analyzing method of an etching apparatus according to claim 1 , wherein information of the combination of wavelength and time interval, which exhibits the minimum prediction error selected as the wavelength and the time interval for predicting the etching processing result, is displayed on a screen together with the prediction error information.

4. An etching method of etching a specimen inside an exhausted vacuum processing chamber by introducing etching gas into the chamber to generate plasma while monitoring emission of the generated plasma under a predetermined etching processing condition, and adjusting the predetermined etching processing condition based on data derived from monitoring the plasma emission, comprising the steps of:
generating a wavelength combination from wavelength band of plasma emission generated by etching the specimen;
setting a time interval for calculating an average value of emission intensity in a time period for etching the specimen with respect to each of the generated wavelength combinations;
calculating a prediction error upon prediction of an etching processing result using the emission intensity average value in the time interval with respect to each of the generated wavelength combinations;
specifying a combination of wavelength and time interval, which exhibits a minimum value of the calculated prediction error; and
adjusting the etching processing condition using a prediction value of the etching processing result with respect to the combination of wavelength and time interval, which exhibits the minimum value of the specified prediction error.

5. The etching method according to claim 4 ,
Wherein in the step of specifying a combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, a second prediction error is calculated by searching the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits a minimum value of the second prediction error, is selected, as the wavelength and the time interval used for predicting the etching processing result.

6. The etching method according to claim 4 , wherein information of the combination of wavelength and time interval, which exhibits the minimum prediction error selected as the wavelength and the time interval for predicting the etching processing result, is displayed on a screen together with the prediction error information.

Assignees

• Hitachi High Tech Corp

Inventors

• Asakura Ryoji
• Tamaki Kenji
• Kagoshima Akira
• Shiraishi Daisuke

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0421

  for drying etching · CPC title

• H01L21/67069 Primary

  Electricity · mapped topic

• H01L21/67253

  Electricity · mapped topic

• H01J37/3244

  Gas supply means · CPC title