The invention claimed is:
1. A field electron emission film comprising from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes, having such a structure that grooves having a width in a range of from 0.1 to 50 μm are formed in a total extension of 2 mm or more per 1 mm 2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves.
2. A field electron emission device comprising the field electron emission film according to claim 1 formed on a substrate.
3. A light emission device comprising the field electron emission device according to claim 2 , as a cathode electrode, and a structure as an anode being disposed to face the field electron emission device and containing an anode electrode and a fluorescent material, wherein a space between the field electron emission device and the anode is maintained in a vacuum.
4. A method for producing a field electron emission film according to claim 1 , comprising: coating a carbon nanotube dispersion liquid containing an organic indium compound, a tin alkoxide, tin-doped indium oxide particles, and carbon nanotubes, on a substrate, and heating the dispersion liquid to form a tin-doped indium oxide film containing carbon nanotubes; and then forming grooves having a width in a range of from 0.1 to 50 μm in a total extension of 2 mm or more per 1 mm 2 on a surface of the film in order to expose the carbon nanotubes on a wall surface of the grooves.
5. The method for producing a field electron emission film according to claim 4 , wherein a formation method of the grooves is mechanical grinding with abrasive grains.