Internal voltage generation circuits and semiconductor devices including the same

Patent metadata

Field	Value
Publication number	US-9323260-B2
Application number	US-201414175315-A
Country	US
Kind code	B2
Filing date	Feb 7, 2014
Priority date	Sep 12, 2013
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

An internal voltage generation circuit including a voltage generator and a detection voltage generator. The voltage generator generates a temperature reference voltage signal whose level depends on an internal temperature, a division reference voltage signal whose level is constant regardless of the internal temperature, and a selection reference voltage signal obtained by detecting a level of an internal voltage signal. The detection voltage generator compares the division reference voltage signal and the selection reference voltage signal in response to the temperature reference voltage signal to generate a detection voltage signal controlling a pumping operation of the internal voltage signal.

First claim

What is claimed is:

1. An internal voltage generation circuit, the circuit comprising:
a voltage generator suitable for generating a temperature reference voltage signal whose level depends on an internal temperature, a division reference voltage signal whose level is constant regardless of the internal temperature, and a selection reference voltage signal obtained by detecting a level of an internal voltage signal, a level of the selection reference voltage signal being controlled according to a first test mode signal; and
a detection voltage generator suitable for comparing the division reference voltage signal and the selection reference voltage signal in response to the temperature reference voltage signal to generate a detection voltage signal controlling a pumping operation of the internal voltage signal.

2. The circuit of claim 1 ,
wherein the voltage generator includes a temperature reference voltage generator; and
wherein the temperature reference voltage generator is suitable for including a temperature sensitive element whose resistance value varies according to the internal temperature and suitable for dividing a level of a reference voltage signal to generate the temperature reference voltage signal.

3. The circuit of claim 2 , wherein the voltage generator further includes a division reference voltage generator suitable for dividing the level of the reference voltage signal to generate the division reference voltage signal.

4. The circuit of claim 3 , wherein the voltage generator further includes a selection reference voltage generator suitable for dividing the level of the reference voltage signal to generate a plurality of divided voltage signals and suitable for outputting one of the divided voltage signals as the selection reference voltage signal in response to the first test mode signal.

5. The circuit of claim 4 , wherein the reference voltage signal is generated when a power supply voltage has a predetermined level or higher after the power supply voltage is applied to the voltage generator.

6. The circuit of claim 1 , wherein a level of the temperature reference voltage signal increases as the internal temperature decreases.

7. The circuit of claim 6 , wherein a level of the selection reference voltage signal for changing a level of the detection voltage signal is set to increase as the internal temperature decreases.

8. The circuit of claim 7 , wherein the detection voltage generator is suitable for generating the detection voltage signal driven to a first level to execute the pumping operation of the internal voltage signal if a level of the selection reference voltage signal is higher than a level of the division reference voltage signal when the internal temperature has a predetermined temperature.

9. The circuit of claim 8 , wherein the detection voltage generator is suitable for generating the detection voltage signal driven to a second level to terminate the pumping operation of the internal voltage signal if a level of the selection reference voltage signal is lower than a level of the division reference voltage signal when the internal temperature has the predetermined temperature.

10. The circuit of claim 1 , wherein the detection voltage generator includes:
a comparison driver suitable for comparing the selection reference voltage signal with the division reference voltage signal to control a drive of the detection voltage signal; and
a level controller suitable for comparing the temperature reference voltage signal with the division reference voltage signal in response to a second test mode signal to control a level of the selection reference voltage signal driving the detection voltage signal.

11. The circuit of claim 10 , wherein the comparison driver includes:
a constant current source suitable for supplying a constant current to a first node and a second node;
a comparison set unit suitable for receiving the selection reference voltage signal and the division reference voltage signal to set a level of the first node and a level of the second node;
an activation unit suitable for activating the comparison set unit in response to a reference voltage signal and an active signal; and
a driver suitable for driving the detection voltage signal in response to signals of the first and second nodes.

12. The circuit of claim 11 , wherein the level controller includes:
a discharger suitable for discharging electric charges of the first and second nodes in response to the temperature reference voltage signal and the division reference voltage signal; and
a discharge controller suitable for controlling the amount of electric charges discharged from the first and second nodes in response to the reference voltage signal, the active signal and the second test mode signal.

13. An internal voltage generation circuit, the circuit comprising:
a comparison driver suitable for comparing a selection reference voltage signal whose level is controlled according to an internal voltage signal and a first test mode signal with a division reference voltage signal whose level is constant regardless of an internal temperature to control a drive of a detection voltage signal controlling a pumping operation of the internal voltage signal; and
a level controller suitable for comparing a temperature reference voltage signal whose level depends on the internal temperature with the division reference voltage signal in response to a second test mode signal to control a level of the selection reference voltage signal driving the detection voltage signal.

14. The circuit of claim 13 , wherein a level of the temperature reference voltage signal increases as the internal temperature decreases.

15. The circuit of claim 14 , wherein a level of the selection reference voltage signal for changing a level of the detection voltage signal is set to increase as the internal temperature decreases.

16. The circuit of claim 13 , wherein the comparison driver includes:
a constant current source suitable for supplying a constant current to a first node and a second node;
a comparison set unit suitable for receiving the selection reference voltage signal and the division reference voltage signal to set a level of the first node and a level of the second node;
an activation unit suitable for activating the comparison set unit; and
a driver suitable for driving the detection voltage signal in response to signals of the first and second nodes.

17. The circuit of claim 16 , wherein the level controller includes:
a discharger suitable for discharging electric charges of the first and second nodes in response to the temperature reference voltage signal and the division reference voltage signal; and
a discharge controller suitable for controlling the amount of electric charges discharged from the first and second nodes in response to the second test mode signal.

18. A semiconductor device comprising:
a control circuit suitable for generating a first test mode signal, a second test mode signal, and a power supply voltage; and
an internal voltage generation circuit suitable for generating a reference voltage signal in response to the power supply voltage, suitable for generating a temperature reference voltage signal, a division reference voltage signal and a selection reference voltage signal which are obtained from the reference voltage signal, and suitable for comparing the selection reference voltage signal with the division reference voltage signal in response to the temperature reference voltage signal to generate a detection voltage signal controlling a

Assignees

• Sk Hynix Inc

Inventors

• Kim Jae Hoon

Classifications

• G05F1/465 Primary

  Internal voltage generators for integrated circuits, e.g. step down generators · CPC title

• G05F1/565 Primary

  sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor (G05F1/563 takes precedence) · CPC title

• G05F3/02

  Regulating voltage or current · CPC title