Semiconductor device being capable of improving the breakdown characteristics

Patent metadata

Field	Value
Publication number	US-9323231-B2
Application number	US-201414466732-A
Country	US
Kind code	B2
Filing date	Aug 22, 2014
Priority date	Apr 1, 2014
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A semiconductor device, wherein the semiconductor device includes a high-voltage supply circuit suitable for supplying a high voltage; a discharge circuit suitable for discharging the high voltage; and an auxiliary-voltage supply circuit suitable for supplying a first auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit, to a reference node of the discharge circuit.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a high-voltage supply circuit suitable for supplying a high voltage to an output terminal;
a discharge circuit connected between the output terminal and a ground node; and
an auxiliary-voltage supply circuit suitable for supplying a first auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit to the ground node.

2. The semiconductor device of claim 1 ,
wherein the auxiliary-voltage supply circuit supplies the first auxiliary voltage having a positive polarity to the ground node when the high-voltage supply circuit operates, and
wherein the auxiliary-voltage supply circuit supplies the first auxiliary voltage having a ground level to the ground node when the high-voltage supply circuit does not operate.

3. The semiconductor device of claim 2 ,
wherein the discharge circuit includes a transistor connected to the ground node, and
wherein, when the high-voltage supply circuit operates, the auxiliary-voltage supply circuit supplies a second auxiliary voltage having a positive polarity to a gate of the transistor.

4. The semiconductor device of claim 1 , wherein the discharge circuit includes a transistor connected between the output terminal and the ground node.

5. The semiconductor device of claim 4 ,
wherein the auxiliary-voltage supply circuit supplies the first auxiliary voltage having a positive polarity to the ground node, and a second auxiliary voltage having a positive polarity to a gate of the transistor when the high-voltage supply circuit operates, and
wherein the auxiliary-voltage supply circuit supplies the first auxiliary voltage having a ground level to the ground node, and the second auxiliary voltage having a positive polarity to the gate of the transistor when the high-voltage supply circuit does not operate.

6. The semiconductor device of claim 5 , wherein the first auxiliary voltage having a positive polarity is lower than a sum of the second auxiliary voltage having a positive polarity and a threshold voltage of the transistor, to the gate.

7. The semiconductor device of claim 1 ,
wherein the high-voltage supply circuit includes:
a high-voltage supply control unit suitable for generating a control signal; and
a high-voltage supply unit suitable for outputting the high voltage in response to the control signal, and
wherein the auxiliary-voltage supply circuit operates in response to the control signal.

Assignees

• Sk Hynix Inc

Inventors

• Lee Yeonghun

Classifications

• G11C16/30 Primary

  Power supply circuits · CPC title

• Y10T307/549

  Cross-Sectional Technologies · mapped topic

• G05B11/01 Primary

  electric · CPC title

• H02J9/061

  for DC powered loads · CPC title