Coating compositions for photolithography

US9323154B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9323154-B2
Application numberUS-78631907-A
CountryUS
Kind codeB2
Filing dateApr 11, 2007
Priority dateApr 11, 2006
Publication dateApr 26, 2016
Grant dateApr 26, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of preparing an electronic device, comprising: (a) applying a coating layer of an organic antireflective composition on a substrate, wherein the antireflective composition comprises a resin that comprises photoacid-labile groups material that produces alkaline-soluble groups upon thermal treatment or exposure to activating radiation; (b) exposing to activating radiation or thermally treating the antireflective composition coating layer to produce COOH groups; (c) crosslinking the antireflective composition coating layer with the alkaline-soluble groups; (d) applying a photoresist composition layer above the crosslinked antireflective composition coating layer; (e) exposing the applied photoresist composition coating layer to patterned activating radiation; and (f) treating the exposed photoresist layer with an aqueous alkaline developer composition to develop the patterned image in both the photoresist composition layer and the underlying antireflective composition coating layer. 2. The method of claim 1 wherein the antireflective composition coating layer is thermally treated to produce alkaline-soluble groups. 3. The method of claim 1 wherein the antireflective composition coating layer is exposed to activating radiation to produce alkaline-soluble groups. 4. The method of claim 1 wherein the alkaline-soluble groups react to form anhydride groups. 5. The method of claim 1 wherein the antireflective composition comprises a resin that comprises photoacid-labile ester groups. 6. The method of claim 1 wherein the antireflective composition comprises a resin that comprises photoacid-labile acetal groups. 7. The method of claim 1 wherein the antireflective composition comprises a resin that comprises polymerized t-butylacrylate ester or t-butylmethacrylate ester groups.

Assignees

Inventors

Classifications

  • using an anti-reflective coating · CPC title

  • using lasers · CPC title

  • G03F7/091Primary

    characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

  • G03F7/11Primary

    having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

  • Aqueous alkaline compositions · CPC title

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What does patent US9323154B2 cover?
In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an…
Who is the assignee on this patent?
Zampini Anthony, Gallagher Michael K, Ongayi Owendi, and 1 more
What technology area does this patent fall under?
Primary CPC classification G03F7/091. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).