Process for the electrochemical deposition of a semiconductor material

Patent metadata

Field	Value
Publication number	US-9322108-B2
Application number	US-201314392013-A
Country	US
Kind code	B2
Filing date	Jul 24, 2013
Priority date	Jul 27, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

First claim

The invention claimed is:

1. A process for the electrochemical deposition of a semiconductor material, which process comprises:
(i) providing a non-aqueous solvent;
(ii) providing at least one precursor salt which comprises a halometallate anion salt wherein a metal in the halometallate is Al, Ga, In, Ge, Sn, Pb, As, Sb, Bi, Se, Te, Cd or Hg and which forms a source of the constituent elements within the semiconductor material to be deposited; and
(iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent,
characterised in that:
(iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and
(v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

2. A process according to claim 1 in which the halocarbon non-aqueous solvent is a fluoroalkane, a chloroalkane or a bromoalkane.

3. A process according to claim 1 in which the halocarbon non-aqueous solvent is dichloromethane, chloroform, difluoromethane, trifluoromethane, 1,1-dichloroethane, 1,2-dichloroethane, 1,1,1-trichloroethane or 1,1,2-trichloroethane.

4. A process according to claim 1 in which the halocarbon non-aqueous solvent is a fluoro-, chloro- or bromo-benzene, fluorotoluene or o-, m- or p-fluorotoluene.

5. A process according to claim 1 in which the halometallate anion is a chlorometallate anion, a bromometallate anion, or an iodometallate anion.

6. A process according to claim 5 in which the halometallate anion salt has the general formula:
[cation] X [M z X y ]
where x =1, 2 or 3
z =1 and then y =3, 4, 5 or 6
z =2 and then y =8, 9 or 10
M =Hg, Cd, Al, Ga, In, Ge, Sn, Pb, As, Sb, Bi, Se or Te

and
X=CI, Br or I.

7. A process according to claim 6 in which:
[M z X y ]=
[AlX 4 ] −
[InX 4 ] −
[GeX 5 ] −
[SbX 4 ] −
[BiX 4 ] −
[SbCI 6 ] −
[SeX 6 ] 2−
[TeX 6 ] 2−
[GaX 4 ] −
[GeX 6 ] 2−
[GeX 3 ] −
[SnX 6 ] 2−
[SnX 5 ] −
[SnX 3 ] −
[PbX 3 ] −
[PbX 6 ] 2−
[AsX 4 ] −
[SbX 5 ] 2−
[SbX 6 ] 3−
[BiX 5 ] 2−
[BiX 6 ] 3−
[Sb 2 X 8 ] 2−
[Bi 2 X 8 ] 2−
[Se 2 X 10 ] 2−
[Te 2 X 10 ] 2−
[CdX 4 ] 2−
[CdX 5 ] 3−
[HgX 4 ] 2−
[HgX 5 ] 2−
[HgX 3 ] − .

8. A process according to claim 1 in which the precursor salt contains a redox inactive cation.

9. A process according to claim 8 in which the redox inactive cation in the precursor salt is a quaternary ammonium cation having a group [R 4 N] + where R =alkyl.

10. A process according to claim 8 in which the redox inactive cation in the precursor salt is imidazolium; alkyl substituted imidazolium, where alkyl is methyl, ethyl, propyl, butyl, pentyl, hexyl, benzyl, cyclopentyl, cyclohexyl, or mixtures thereof; pyrrolidinium; alkyl substituted pyrrolidinium where alkyl is methyl, ethyl, propyl, butyl, pentyl, hexyl, benzyl, cyclopentyl, cyclohexyl, or mixtures thereof; [PPh 4 ] + ; [AsPh 4 ] + or [(PPh 3 ) 2 N] + .

11. A process according to claim 1 and including providing a supporting electrolyte salt for the non-aqueous solvent.

12. A process according to claim 11 in which the supporting electrolyte salt is a redox inactive salt.

13. A process according to claim 12 in which the redox inactive salt is in the form of a cation and an anion.

14. A process according to claim 11 in which an anion in the supporting electrolyte salt is halide, tetrafluoroborate, hexafluorophosphate, a tetra-arylborate, a fluorinated tetra-arylborate, tetra-alkoxyaluminate, or a fluorinated tetra-alkoxyaluminate anion.

15. A process according to claim 11 in which a cation in the supporting electrolyte salt is a redox inactive quaternary ammonium cation salt having a group [R 4 N] + where R=alkyl.

16. A process according to claim 1 in which the electrodeposition is a continuous electrodeposition or a pulsed electrodeposition.

17. A process according to claim 1 in which the electrode substrate is an electrode substrate having insulating pores, in which the semiconductor material is deposited as a shaped structure, in which the shaped structure is a plurality of pillars, and in which the pillars are electrodeposited in the insulating pores.

18. A process according to claim 1 in which the semiconductor material is electrodeposited all over the electrode substrate, the electrode substrate being a flat electrode substrate.

19. A process according to claim 1 in which the semiconductor material is a compound semiconductor containing two or more p-block elements, a single semiconductor element or a semiconductor alloy.

Assignees

• Univ Southampton

Inventors

• Reid Gillian
• Bartlett Philip Nigel
• Hector Andrew Lee

Classifications

• H10P14/3422

  Antimonides · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/265

  using solutions · CPC title

• H01L45/144

  Electricity · mapped topic