Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9318874-B2
Application number	US-79147410-A
Country	US
Kind code	B2
Filing date	Jun 1, 2010
Priority date	Jun 3, 2009
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor layer stacked on a substrate, the semiconductor layer including an optical waveguide region;
a stripe-shaped ridge formed on a surface of the semiconductor layer;
a first electrode formed on an upper surface of the ridge, and including a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge;
a protective film covering each side surface of the ridge and the sloped surface portions of the first electrode; and
a second electrode electrically connected to the first electrode, and formed over the first electrode and the protective film so that an upper surface of a part of the second electrode is positioned lower than the upper surface of the ridge, wherein
an inclination angle of the sloped surface of the first electrode is smaller than an inclination angle of a side surface of the ridge.

2. The semiconductor device according to claim 1 , wherein
an uppermost end of the protective film is positioned higher than an upper surface of the first electrode.

3. The semiconductor device according to claim 1 , wherein
an uppermost end of the protective film is positioned 100 nm or more higher than an upper surface of the first electrode.

4. The semiconductor device according to claim 1 , wherein
the first electrode is bonded with the semiconductor layer only at the upper surface of the ridge.

5. The semiconductor device according to claim 1 , wherein
the protective film and the first electrode define a recessed shape in a bonding region between the protective film and the first electrode.

6. The semiconductor device according to claim 1 , wherein
an end portion of the protective film on each side of the ridge and the upper surface of the first electrode define a recessed shape.

7. The semiconductor device according to claim 1 , wherein
the flat portion and the sloped portions of the first electrode are disposed above an upper surface of the ridge.

8. The semiconductor device according to claim 1 , wherein
a width of the flat surface of the flat portion of the first electrode is smaller than a width of a bottom surface of the first electrode facing the upper surface of the ridge.

9. The semiconductor device according to claim 1 , wherein
the upper surface of the part of the second electrode is positioned lower than a bottom surface of the first electrode.

10. The semiconductor device according to claim 1 , wherein
a part of the protective film, which covers the side surface of the ridge and an upper surface of the semiconductor layer adjacent to the ridge, has an L-shape cross sectional shape.

11. The semiconductor device according to claim 1 , wherein
the second electrode is arranged over the side surface of the ridge via the protective film.

12. The semiconductor device according to claim 1 , wherein
The protective film does not cover an upper surface of the first electrode.

13. A semiconductor device comprising:
a semiconductor layer stacked on a substrate, the semiconductor layer including an optical waveguide region;
a stripe-shaped ridge formed on a surface of the semiconductor layer;
a first electrode formed on an upper surface of the ridge, and including a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge;
a protective film covering each side surface of the ridge and the sloped surface portions of the first electrode; and
a second electrode electrically connected to the first electrode, and formed over the first electrode and the protective film so that an upper surface of a part of the second electrode is positioned lower than the upper surface of the ridge, wherein
each of the sloped portions of the first electrode has a height as measured from a top surface of the ridge decreasing from an end of the flat portion toward the side surface of the ridge.

14. The semiconductor device according to claim 13 , wherein
an inclination angle of the sloped surface of the first electrode is different from an inclination angle of a side surface of the ridge.

15. The semiconductor device according to claim 14 , wherein
the inclination angle of the sloped surface of the first electrode is smaller than the inclination angle of the side surface of the ridge.

Assignees

• Michiue Atsuo
• Kawata Yasuhiro
• Nichia Corp

Inventors

• Michiue Atsuo
• Kawata Yasuhiro

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/0213

  Sapphire, quartz or diamond based substrates · CPC title

• H01S5/2205

  comprising special burying or current confinement layers · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title