VCSEL with integrated electrically modulated intra-cavity graphene absorber

Patent metadata

Field	Value
Publication number	US-9318872-B2
Application number	US-201514589392-A
Country	US
Kind code	B2
Filing date	Jan 5, 2015
Priority date	Jan 3, 2014
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A VCSEL can include a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region. The VCSEL can also include a graphene electrode electronically coupled with at least one graphene region. The VCSEL can also include a contact region adjacent with at least one dielectric region. The VCSEL can also include a contact electrode electronically coupled with the contact region. The VCSEL can also include a base electrode electronically coupled with a base of a semiconductor region of the VCSEL. The graphene intra-cavity absorber can include at least two graphene regions sandwiching at least one dielectric region therebetween.

First claim

The invention claimed is:

1. A VCSEL comprising:
a bottom electrode;
a bottom mirror stack electrically coupled to and over the bottom electrode;
an active region having a lasing region over the bottom mirror stack;
a top mirror stack over the active region;
an oxide aperture over the active region;
a contact region over the top mirror stack;
a contact electrode electrically coupled with the contact region;
a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region;
a graphene electrode electronically coupled with the top graphene region; and
a dielectric mirror over the graphene region.

2. The VCSEL of claim 1 , wherein the graphene electrode provides modulation voltage to modulate absorption of the graphene intra-cavity absorber.

3. The VCSEL of claim 1 , comprising the contact region being adjacent with and in contact with at least one dielectric region.

4. The VCSEL of claim 3 , wherein the contact electrode provides an E-field to the graphene intra-cavity absorber.

5. The VCSEL of claim 1 , comprising:
at least two graphene regions sandwiching at least one dielectric region therebetween, the at least two graphene regions including the bottom graphene region and top graphene region;
a first graphene electrode electronically coupled with a first graphene region; and
a second graphene electrode electronically coupled with a second graphene region.

6. The VCSEL of claim 1 , wherein the graphene intra-cavity absorber is in a top mirror.

7. The VCSEL of claim 5 , wherein the graphene intra-cavity absorber is over a contact region with an insulating region therebetween.

8. The VCSEL of claim 1 , comprising:
the bottom mirror stack is a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode;
the top mirror stack is a top semiconductor mirror stack over the active region;
the contact electrode being an annular contact electrode electrically coupled with the contact region;
an electrically insulating region over the contact region;
the bottom graphene region over the contact region with the electrically insulating region therebetween;
a bottom graphene electrode electronically coupled with the bottom graphene region;
the dielectric region over the contact region is within an aperture of the annular contact electrode.

9. A method of emitting modulated light, the method comprising, providing the VCSEL of claim 1 ;
operating the VCSEL so as to produce light; and
operating the graphene intra-cavity absorber so as to modulate the light.

10. The method of claim 9 , the operating of the graphene intra-cavity absorber including changing light absorption characteristics thereof with electrical current.

11. The method of claim 10 , comprising providing sufficient electrical current to allow light to pass through the graphene intra-cavity absorber and be emitted from the VCSEL.

12. The VCSEL of claim 1 , the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.

13. The method of claim 9 , the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.

14. A method of manufacturing a VCSEL, the method comprising
forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region;
forming a dielectric region over the contact region;
forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region;
forming a graphene electrode so as to be electrically coupled with the graphene region;
forming at least one AlAs region and at least one GaAs region between the graphene region and the VCSEL semiconductor region; and
oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.

15. The method of claim 14 , comprising forming a dielectric mirror stack over the graphene region.

16. The method of claim 14 , comprising:
forming a bottom graphene region under the dielectric region; and
forming a bottom graphene electrode to be electronically coupled with the bottom graphene region.

17. The method of claim 14 , comprising:
forming a silicon dioxide region under the bottom graphene region; and
forming a conductive oxide region under the silicon dioxide region.

18. The method of claim 17 , comprising forming an electrode to be in electrical contact with the silicon dioxide region and lower conductive oxide region.

19. The method of claim 14 , comprising configuring the lasing region so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.

20. A VCSEL comprising:
a bottom electrode;
a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode;
an active region having a lasing region over the bottom semiconductor mirror stack;
a top semiconductor mirror stack over the active region;
an oxide aperture over the active region;
a contact region over the top semiconductor mirror stack;
an annular contact electrode electrically coupled with the contact region;
an electrically insulating region over the contact region;
a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region; a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the dielectric region;
a top graphene electrode electronically coupled with the top graphene region; and
a dielectric mirror over the graphene region.

Assignees

• Finisar Corp

Inventors

• Graham Luke A
• Johnson Ralph H
• Guenter James K

Classifications

• H01S3/1061

  using a variable absorption device · CPC title

• Y10T29/41

  Cross-Sectional Technologies · mapped topic

• H01S5/183 Primary

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/0601 Primary

  comprising an absorbing region (H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026) · CPC title

• H01S5/0609

  acting on an absorbing region, e.g. wavelength convertors · CPC title