Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern

Patent metadata

Field	Value
Publication number	US-9318695-B2
Application number	US-201514614724-A
Country	US
Kind code	B2
Filing date	Feb 5, 2015
Priority date	Jul 26, 2010
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a reference pattern on a substrate;
a free pattern on the substrate;
a tunnel barrier pattern between the free pattern and the reference pattern; and
particles within the free pattern and comprising a nonmagnetic conductive material.

2. The magnetic memory device of claim 1 , wherein the free pattern comprises a first surface and a second surface opposite to each other;
the first surface of the free pattern is adjacent to the tunnel barrier pattern; and
the particles are spaced from the first and second surfaces.

3. The magnetic memory device of claim 1 , wherein the free pattern comprises a first surface adjacent to the tunnel barrier pattern and a second surface opposite to the first surface; and
the reference pattern and the tunnel barrier pattern correspond to a first reference pattern and a first tunnel barrier pattern, respectively, and
further comprising:
a second reference pattern on the second surface of the free pattern; and
a second tunnel barrier pattern between the second surface of the free pattern and the second reference pattern.

4. The magnetic memory device of claim 1 , wherein the reference pattern comprises a first magnetic material;
the free pattern comprises a second magnetic material;
each of the first and second magnetic materials comprises iron (Fe); and
a content ratio of iron (Fe) in the second magnetic material is equal to or greater than a content ratio of iron (Fe) in the first magnetic material.

Assignees

• Oh Sechung
• Lee Jangeun
• Kim Woojin
• Shin Heeju
• Samsung Electronics Co Ltd

Inventors

• Oh Sechung
• Lee Jangeun
• Kim Woojin
• Shin Heeju

Classifications

• H01L27/222

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic