Semiconductor ceramic and semiconductor ceramic element

Patent metadata

Field	Value
Publication number	US-9318684-B2
Application number	US-201313944002-A
Country	US
Kind code	B2
Filing date	Jul 17, 2013
Priority date	Jan 21, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.

First claim

The invention claimed is:

1. A semiconductor ceramic comprising a perovskite or pyrochlore oxide containing Dy or Er, nickel, and titanium, wherein a part of said nickel is present as metal nickel, the semiconductor ceramic is a ferromagnetic substance, and the semiconductor ceramic element has resistance change characteristics relative to temperature that are larger in a temperature range of about 0° C. to +80° C. than at temperatures immediately on either side of said temperature range.

2. The semiconductor ceramic according to claim 1 , wherein at least a part of said metal nickel is dispersed in the semiconductor ceramic.

3. A semiconductor ceramic element comprising:
an element main body comprising a semiconductor ceramic according to claim 2 ; and
a pair of electrodes disposed to interpose at least a part of said element main body therebetween.

4. The semiconductor ceramic element according to claim 3 , which is a temperature sensor adapted to sense a temperature in accordance with a resistance change generated in a temperature range of −25° C. to +85° C.

5. A semiconductor ceramic element comprising:
an element main body comprising a semiconductor ceramic according to claim 1 ; and
a pair of electrodes disposed to interpose at least a part of said element main body therebetween.

6. The semiconductor ceramic element according to claim 5 , which is a temperature sensor adapted to sense a temperature in accordance with a resistance change generated in a temperature range of −25° C. to +85° C.

Assignees

• Koto Kiyohiro
• Murata Manufacturing Co

Inventors

• Koto Kiyohiro

Classifications

• C04B2235/3279

  Nickel oxides, nickalates, or oxide-forming salts thereof · CPC title

• C04B2235/3224

  Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

• C04B35/62675

  characterised by the treatment temperature · CPC title

• G01K7/16

  using resistive elements · CPC title

• C04B35/63416

  Polyvinylalcohols [PVA]; Polyvinylacetates · CPC title