Light-emitting diode and light-emitting diode lamp

Patent metadata

Field	Value
Publication number	US-9318673-B2
Application number	US-201113817226-A
Country	US
Kind code	B2
Filing date	Aug 16, 2011
Priority date	Aug 18, 2010
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

The present invention relates to a light-emitting diode which has an emission wavelength of 655 nm or more, excellent monochromatic properties, high output, high luminance, high efficiency and fast response time, has such a characteristic that the intensity of light emitted from a light extraction surface and traveling in a direction perpendicular to the light extraction surface has high directivity, and can release heat to the outside with high efficiency; and a light-emitting diode lamp. The light-emitting diode includes a compound semiconductor layer ( 11 ) which includes at least a pn-junction-type light-emitting section ( 3 ) and a strain adjustment layer ( 13 ) laminated on the light-emitting section ( 3 ); wherein the light-emitting section ( 3 ) has a laminated structure composed of a strained light-emitting layer having a composition formula (Al X Ga 1-X ) Y In 1-Y P (0≦X≦0.1, 0.37≦Y≦0.46) and a barrier layer, wherein the strain adjustment layer ( 13 ) can be penetrated by light from the light-emitting section ( 3 ) and has a smaller lattice constant than those of the strained light-emitting layer and the barrier layer; and wherein a functional substrate ( 5 ) is bonded to a surface ( 11 b ) of the compound semiconductor layer ( 11 ) which is located on the opposite side with respect to the light extraction surface ( 11 a ) through a reflective structure ( 4 ).

First claim

The invention claimed is:

1. A light-emitting diode, comprising a compound semiconductor layer which comprises:
a pn junction-type light-emitting section, and
a strain adjustment layer laminated on the light-emitting section,
wherein the light-emitting section has a laminated structure composed of a strained light-emitting layer having a composition formula (Al X Ga 1-X ) Y In 1-Y P (0≦X≦0.1, 0.37≦Y≦0.46) and a barrier layer, and the light-emitting section further comprises a clad layer on both of an upper surface and a lower surface of the laminated structure composed of the strained light-emitting layer and the barrier layer, wherein a composition formula of the clad layer is (Al X Ga 1-X ) Y In 1-Y P (0.5≦X≦1, 0.48≦Y≦0.52),
a composition formula of the strain adjustment layer is (Al X Ga 1-X ) Y In 1-Y P (0≦X≦1 and 0.6≦Y≦1) and the strain adjustment layer is transparent with respect to the emission wavelength, and has a lattice constant smaller than the lattice constants of the strained light-emitting layer and the barrier layer, and
a functional substrate is bonded to a surface of the compound semiconductor layer through a reflective structure wherein the surface is located on the opposite side with respect to a light extraction surface.

2. The light-emitting diode according to claim 1 , wherein the functional substrate is a metal substrate.

3. The light-emitting diode according to claim 2 , wherein the metal substrate is made of a plurality of stacked metal layers.

4. The light-emitting diode according to claim 1 , wherein the material of the functional substrate is any one of GaP, Si or Ge.

5. The light-emitting diode according to claim 1 , the ratio between an irradiance in a direction forming an angle of 90° with respect to the light extraction surface and an irradiance in a direction forming an angle of 45° with respect to the light extraction surface is at least 1.0 times.

6. The light-emitting diode according to claim 1 , wherein the composition formula of the strained light-emitting layer is Ga X In 1-X P (0.37≦X≦0.46).

7. The light-emitting diode according to claim 1 , wherein a thickness of the strained light-emitting layer is within a range of from 8 to 30 nm.

8. The light-emitting diode according to claim 1 , wherein the light-emitting section comprises 8 to 40 layers of strained light-emitting layers.

9. The light-emitting diode according to claim 1 , wherein the composition formula of the barrier layer is (Al X Ga 1-X ) Y In 1-Y P (0.3≦X≦0.7, 0.48≦Y≦0.52).

10. The light-emitting diode according to claim 1 , wherein a material of the strain adjustment layer is GaP.

11. The light-emitting diode according to claim 1 , wherein a thickness of the strain adjustment layer is within a range of from 0.5 to 20 μm.

12. The light-emitting diode according to claim 1 , wherein the light extraction surface comprises a rough surface.

13. The light-emitting diode according to claim 1 , which is used for promoting photosynthesis during plant growth, wherein a peak emission wavelength of the strained light-emitting layer is within a range of from 655 to 675 nm.

14. The light-emitting diode according to claim 13 , wherein the full width at half maximum of the emission spectrum is within a range of from 10 to 40 nm.

15. The light-emitting diode according to claim 13 , wherein light emission intensity of the strained light-emitting layer at an emission wavelength of 700 nm is less than 10% of light emission intensity at the peak emission wavelength.

16. The light-emitting diode according to claim 1 , wherein a response time (Tr) of the light-emitting section is 100 ns or less.

17. A light-emitting diode lamp, comprising
a mounting substrate on which surface electrode terminals are formed, and
a light-emitting diode according to claim 1 ,
wherein the light-emitting diode is mounted on the mounting substrate, and the light-emitting diode is electrically connected to the electrode terminals.

Assignees

• Seo Noriyoshi
• Matsumura Atsushi
• Showa Denko Kk

Inventors

• Seo Noriyoshi
• Matsumura Atsushi

Classifications

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10H20/8581

  characterised by their material · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/018

  Bonding of wafers · CPC title