Method for manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9318617-B2
Application number	US-201414574964-A
Country	US
Kind code	B2
Filing date	Dec 18, 2014
Priority date	Sep 24, 2009
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
performing a first heat treatment in a chamber in which a substrate and a target are provided;
forming an oxide semiconductor film over the substrate by sputtering method using the target; and
performing a second heat treatment on the oxide semiconductor film,
wherein the oxide semiconductor film is formed in the chamber without exposure to air after the first heat treatment,
wherein moisture remaining on an inner wall of the chamber and moisture remaining in the target are reduced by the first heat treatment,
wherein gas in the chamber is exhausted during the first heat treatment, and
wherein hydrogen or moisture in the oxide semiconductor film is reduced by the second heat treatment.

2. The method for manufacturing the semiconductor device according to claim 1 ,
wherein a gate electrode and a gate insulating layer over the gate electrode are formed over the substrate before the first heat treatment, and
wherein the oxide semiconductor film is formed over the gate insulating layer.

3. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the oxide semiconductor film contains indium and zinc.

4. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film after the second heat treatment.

5. The method for manufacturing the semiconductor device according to claim 1 ,
wherein moisture remaining on the inner wall of the chamber and moisture remaining in the target are removed by the first heat treatment.

6. A method for manufacturing a semiconductor device comprising the steps of:
performing a first heat treatment in a chamber in which a substrate and a target are provided;
forming an oxide semiconductor film over the substrate by sputtering method using the target; and
performing a second heat treatment on the oxide semiconductor film,
wherein the first heat treatment is performed at a temperature from 200° C. to 600° C.,
wherein the oxide semiconductor film is formed in the chamber without exposure to air after the first heat treatment,
wherein moisture remaining on an inner wall of the chamber and in the target is reduced by the first heat treatment, and
wherein hydrogen or moisture in the oxide semiconductor film is reduced by the second heat treatment.

7. The method for manufacturing the semiconductor device according to claim 6 ,
wherein the first heat treatment is performed under a reduced pressure.

8. The method for manufacturing the semiconductor device according to claim 6 ,
wherein a gate electrode and a gate insulating layer over the gate electrode are formed over the substrate before the first heat treatment, and
wherein the oxide semiconductor film is formed over the gate insulating layer.

9. The method for manufacturing the semiconductor device according to claim 6 ,
wherein the oxide semiconductor film contains indium and zinc.

10. The method for manufacturing the semiconductor device according to claim 6 ,
wherein the oxide semiconductor film includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film after the second heat treatment.

11. The method for manufacturing the semiconductor device according to claim 6 ,
wherein moisture remaining on the inner wall of the chamber and moisture remaining in the target are removed by the first heat treatment.

12. A method for manufacturing a semiconductor device comprising the steps of:
performing a first heat treatment in a chamber in which a substrate and a target are provided;
forming an oxide semiconductor film over the substrate by sputtering method using the target; and
performing a second heat treatment on the oxide semiconductor film,
wherein the oxide semiconductor film is formed in the chamber without exposure to air after the first heat treatment,
wherein moisture remaining on an inner wall of the chamber and in the target is reduced by the first heat treatment,
wherein moisture remaining in the chamber is reduced by a cryopump before, during or after forming the oxide semiconductor film, and
wherein hydrogen or moisture in the oxide semiconductor film is reduced by the second heat treatment.

13. The method for manufacturing the semiconductor device according to claim 12 ,
wherein inert gas is introduced into the chamber and then exhausted from the chamber during the first heat treatment.

14. The method for manufacturing the semiconductor device according to claim 12 ,
wherein a gate electrode and a gate insulating layer over the gate electrode are formed over the substrate before the first heat treatment, and
wherein the oxide semiconductor film is formed over the gate insulating layer.

15. The method for manufacturing the semiconductor device according to claim 12 ,
wherein the oxide semiconductor film contains indium and zinc.

16. The method for manufacturing the semiconductor device according to claim 12 ,
wherein the oxide semiconductor film includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film after the second heat treatment.

17. The method for manufacturing the semiconductor device according to claim 12 ,
wherein moisture remaining on the inner wall of the chamber and moisture remaining in the target are removed by the first heat treatment, and
wherein moisture remaining in the chamber is removed by the cryopump before, during or after forming the oxide semiconductor film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Sakakura Masayuki
• Watanabe Ryosuke
• Sakata Junichiro
• Akimoto Kengo
• Miyanaga Akiharu
• Hirohashi Takuya
• Kishida Hideyuki

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D30/031

  of thin-film transistors [TFT] · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D62/40

  Crystalline structures · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title