Semiconductor device and method for fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-9318615-B2
Application number	US-201414318207-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Feb 28, 2014
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A semiconductor device according to an embodiment includes a gate electrode, a first dielectric film, an oxide semiconductor film, a second dielectric film, a source electrode and a drain electrode. The first dielectric film is placed above the gate electrode. The oxide semiconductor film is placed above the first dielectric film. The oxide semiconductor film is formed to have a film thickness in a first contact region in contact with the source electrode and a second contact region in contact with the drain electrode larger than a film thickness in a channel region of the oxide semiconductor film so that a film portion of the first contact region projects toward the source electrode side and a film portion of the second contact region projects toward the drain electrode side.

First claim

What is claimed is:

1. A semiconductor device comprising:
a gate electrode;
a first dielectric film placed above the gate electrode;
an oxide semiconductor film placed above the first dielectric film;
a second dielectric film placed above the oxide semiconductor film;
a source electrode placed in the second dielectric film and connected to the oxide semiconductor film; and
a drain electrode placed in the second dielectric film and connected to the oxide semiconductor film,
wherein the oxide semiconductor film is formed to have a film thickness in a first contact region in contact with the source electrode and a second contact region in contact with the drain electrode larger than a film thickness in a channel region of the oxide semiconductor film so that a film portion of the first contact region projects toward a source electrode side and a film portion of the second contact region projects toward a drain electrode side, and
wherein oxygen concentration of an upper portion of the first contact region, in contact with the source electrode, of the oxide semiconductor film and oxygen concentration of an upper portion of the second contact region, in contact with the drain electrode, of the oxide semiconductor film are higher than oxygen concentration of the channel region of the oxide semiconductor film, the upper portions being at positions higher than a to surface of the channel region.

2. The device according to claim 1 , wherein nitrogen concentration of the upper portion of the first contact region, in contact with the source electrode, of the oxide semiconductor film and nitrogen concentration of the upper portion of the second contact region, in contact with the drain electrode, of the oxide semiconductor film are higher than nitrogen concentration of the channel region of the oxide semiconductor film.

3. The device according to claim 1 , wherein the oxide semiconductor film includes:
a first oxide semiconductor film placed in the first contact region in contact with the source electrode, the second contact region in contact with the drain electrode, and the channel region; and
a second oxide semiconductor film placed in the first contact region in contact with the source electrode and the second contact region in contact with the drain electrode so as to be in contact with a top surface of the first oxide semiconductor film.

4. The device according to claim 3 , wherein the second oxide semiconductor film is formed to insulate the source electrode side and the drain electrode side from each other in a gate length direction of the gate electrode.

5. The device according to claim 3 , wherein oxygen concentration of the second oxide semiconductor film is higher than oxygen concentration of the first oxide semiconductor film.

6. The device according to claim 3 , wherein the second oxide semiconductor film includes:
a third oxide semiconductor film in contact with the source electrode; and
a fourth oxide semiconductor film in contact with the drain electrode.

7. The device according to claim 6 , wherein the third oxide semiconductor film and the fourth oxide semiconductor film are formed not to be connected to each other directly.

8. The device according to claim 6 , wherein the third oxide semiconductor film is formed to cover a bottom surface and side surfaces of the source electrode.

9. The device according to claim 8 , wherein oxygen concentration of a region of the third oxide semiconductor film covering the bottom surface of the source electrode is higher than oxygen concentration of the first oxide semiconductor film.

10. The device according to claim 6 , wherein the fourth oxide semiconductor film is formed to cover a bottom surface and side surfaces of the drain electrode.

11. The device according to claim 10 , oxygen concentration of a region of the fourth oxide semiconductor film covering the bottom surface of the drain electrode is higher than oxygen concentration of the first oxide semiconductor film.

12. The device according to claim 3 , further comprising a third dielectric film placed on the channel region of the first oxide semiconductor film,
wherein the second oxide semiconductor film is formed to be in contact with at least side surfaces of the third dielectric film.

13. The device according to claim 12 , wherein the second oxide semiconductor film is formed not to be in contact with the first oxide semiconductor film on the channel region of the first oxide semiconductor film.

14. A semiconductor device comprising:
a gate electrode;
a first dielectric film placed above the gate electrode;
an oxide semiconductor film placed above the first dielectric film;
a second dielectric film placed above the oxide semiconductor film;
a source electrode placed in the second dielectric film and connected to the oxide semiconductor film; and
a drain electrode placed in the second dielectric film and connected to the oxide semiconductor film,
wherein the oxide semiconductor film is formed to have a film thickness in a first contact region in contact with the source electrode and a second contact region in contact with the drain electrode larger than a film thickness in a channel region of the oxide semiconductor film so that a film portion of the first contact region projects toward a source electrode side and a film portion of the second contact region projects toward a drain electrode side,
wherein nitrogen concentration of an upper portion of the first contact region, in contact with the source electrode, of the oxide semiconductor film and nitrogen concentration of an upper portion of the second contact region, in contact with the drain electrode, of the oxide semiconductor film are higher than nitrogen concentration of the channel region of the oxide semiconductor film, the upper portions being at positions higher than a top surface of the channel region.

15. The device according to claim 14 , wherein the oxide semiconductor film includes:
a first oxide semiconductor film placed in the first contact region in contact with the source electrode, the second contact region in contact with the drain electrode, and the channel region; and
a second oxide semiconductor film placed in the first contact region in contact with the source electrode and the second contact region in contact with the drain electrode so as to be in contact with a top surface of the first oxide semiconductor film.

16. The device according to claim 15 , wherein the second oxide semiconductor film is formed to insulate the source electrode side and the drain electrode side from each other in a gate length direction of the gate electrode.

17. The device according to claim 15 , wherein nitrogen concentration of the second oxide semiconductor film is higher than nitrogen concentration of the first oxide semiconductor film.

18. The device according to claim 15 , wherein the second oxide semiconductor film includes:
a third oxide semiconductor film in contact with the source electrode; and
a fourth oxide semiconductor film in contact with the drain electrode.

19. The device according to claim 18 , wherein the third oxide semiconductor film and the fourth oxide semiconductor film are formed not to be connected to each other directly.

20. The device according to claim 18 , wherein the third oxide semiconductor film is formed to cover a bottom surface and side surfaces of the source electrode.

21. The device according to claim 20 , wherein nitrogen concentration of a region of the third oxide semicon

Assignees

• Toshiba Kk

Inventors

• Ohguro Tatsuya
• Momose Hisayo
• Morooka Tetsu
• Fukase Kazuya

Classifications

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title

• H10D30/751

  having composition variations in the channel regions · CPC title