Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9318506-B2
Application number	US-201213540029-A
Country	US
Kind code	B2
Filing date	Jul 2, 2012
Priority date	Jul 8, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
an oxide semiconductor film over and in direct contact with the glass substrate, the oxide semiconductor film comprising a first region and a second region;
a gate insulating film over the oxide semiconductor film; and
a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×10 14 atoms/cm 2 , and
wherein a resistance of the first region is lower than a resistance of the second region.

2. The semiconductor device according to claim 1 , wherein the gate insulating film comprises an insulating film from which oxygen is released by heat treatment.

3. A semiconductor device comprising:
a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
an oxide semiconductor film over and in direct contact with the insulating glass substrate, the oxide semiconductor film comprising a first region and a second region;
a pair of electrodes at least partly in contact with the first region of the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×10 14 atoms/cm 2 , and
wherein a resistance of the first region is lower than a resistance of the second region.

4. The semiconductor device according to claim 3 , wherein the gate insulating film comprises an insulating film from which oxygen is released by heat treatment.

5. The semiconductor device according to claim 3 , wherein the pair of electrodes is provided between the glass substrate and the oxide semiconductor film.

6. A semiconductor device comprising:
a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
an oxide semiconductor film over and in direct contact with the glass substrate;
a gate insulating film over the oxide semiconductor film; and
a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×10 14 atoms/cm 2 .

7. The semiconductor device according to claim 6 , wherein the gate insulating film comprises an insulating film from which oxygen is released by heat treatment.

Assignees

• Endo Yuta
• Koezuka Junichi
• Sato Yuichi
• Semiconductor Energy Lab

Inventors

• Endo Yuta
• Koezuka Junichi
• Sato Yuichi

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title

• H10D30/031

  of thin-film transistors [TFT] · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title