Capacitor arrangements and method for manufacturing a capacitor arrangement

Patent metadata

Field	Value
Publication number	US-9318485-B2
Application number	US-201213571453-A
Country	US
Kind code	B2
Filing date	Aug 10, 2012
Priority date	Aug 10, 2012
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

In various embodiments, a capacitor arrangement is provided, which may include a substrate; a plurality of first doped regions and a plurality of second doped regions, wherein the first doped regions are doped with dopants of a first conductivity type and the second doped regions are doped with dopants of a second conductivity type being opposite to the first conductivity type, and wherein the plurality of first doped regions and the plurality of second doped regions are alternatingly arranged next to each other in the substrate; a dielectric layer disposed over the plurality of first doped regions and the plurality of second doped regions; an electrode disposed over the dielectric layer; a first terminal electrically coupled to each doped region of the plurality of first doped regions and the plurality of second doped regions; and a second terminal electrically coupled to the electrode.

First claim

What is claimed is:

1. A capacitor arrangement, comprising:
a doped region having an n-type doping or a p-type doping;
a dielectric layer disposed over the doped region;
a plurality of electrodes, wherein the electrodes are arranged next to each other and disposed over the dielectric layer, wherein respectively adjacent electrodes have opposite doping types to each other; and
a first terminal, wherein the first terminal is electrically coupled to the doped region; and
a second terminal, wherein the second terminal is electrically coupled to each electrode of the plurality of electrodes.

2. The capacitor arrangement of claim 1 ,
wherein the doped region is configured as a well.

3. The capacitor arrangement of claim 1 ,
wherein the doping type is an n doping type or a p doping type.

4. The capacitor arrangement of claim 1 ,
wherein the dielectric layer comprises at least one of the following materials:
silicon dioxide;
silicon nitride; and
a high-κ dielectric.

5. The capacitor arrangement of claim 1 ,
wherein the electrode comprises polycrystalline silicon.

6. The capacitor arrangement of claim 1 ,
wherein the electrodes have a respective width of less than 20 μm.

7. A capacitor arrangement, comprising:
a substrate;
a plurality of wells, wherein the wells are arranged as columns in the substrate,
wherein adjacent wells have opposite doping types;
a dielectric layer, wherein the dielectric layer is disposed over the plurality of wells;
a plurality of electrodes, wherein the electrodes are arranged as rows on at least a region of the dielectric layer that is disposed over the plurality of wells, wherein adjacent electrodes have opposite doping types; and
a first terminal, wherein the first terminal is electrically coupled to each well of the plurality of wells; and
a second terminal, wherein the second terminal is electrically coupled to each electrode of the plurality of electrodes.

8. The capacitor arrangement of claim 7 ,
wherein the doping type is an n doping type or a p doping type.

9. The capacitor arrangement of claim 7 ,
wherein the columns and the rows are arranged orthogonal to each other.

10. The capacitor arrangement of claim 7 ,
wherein the dielectric layer comprises at least one of the following materials:
silicon dioxide;
silicon nitride; and
a high-κ dielectric.

11. The capacitor arrangement of claim 7 ,
wherein the electrode comprises polycrystalline silicon.

12. The capacitor arrangement of claim 7 ,
wherein the rows have a width of less than 20 μm.

13. The capacitor arrangement of claim 12 ,
wherein the columns have a width of less than 20 μm.

Assignees

• Bonart Dietrich
• Infineon Technologies Ag

Inventors

• Bonart Dietrich

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D84/217

  of only conductor-insulator-semiconductor capacitors · CPC title

• H10D8/60

  Schottky-barrier diodes · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title