Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

Patent metadata

Field	Value
Publication number	US-9318401-B2
Application number	US-201214369732-A
Country	US
Kind code	B2
Filing date	May 8, 2012
Priority date	May 8, 2012
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10 −6 to 4.13×10 −6 . A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

First claim

The invention claimed is:

1. A glass composition for protecting a semiconductor junction which is used for forming a glass layer to cover a pn junction exposure portion of a silicon-made semiconductor element having the pn junction exposure portion where a pn junction is exposed, the glass composition comprising:
fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO, and at least two oxides of alkaline earth metals selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein
the glass composition further contains nickel oxide,
the content of SiO 2 falls within a range of 49.5 mol % to 64.3 mol %,
the content of B 2 O 3 falls within a range of 8.4 mol % to 17.9 mol %,
the content of Al 2 O 3 falls within a range of 3.7 mol % to 14.8 mol %,
the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %, and
the content of the oxides of alkaline earth metals falls within a range of 7.4 mol % to 12.9 mol %, and
an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10 −6 to 4.13×10 −6 .

2. The glass composition according to claim 1 , wherein
the average linear expansion coefficient within the temperature range of 50° C. to 550° C. falls within a range of 3.38×10 −6 to 4.08×10 −6 .

3. The glass composition according to claim 1 , wherein
a total content of the content of SiO 2 and the content of B 2 O 3 falls within a range of 65 mol % to 75 mol %.

4. The glass composition according to claim 1 , wherein
the glass composition contains, as the oxides of alkaline earth metals, all of CaO, MgO and BaO.

5. The glass composition according to claim 4 , wherein
the content of CaO falls within a range of 2.0 mol % to 5.3 mol %,
the content of MgO falls within a range of 1.0 mol % to 2.3 mol %, and
the content of BaO falls within a range of 2.6 mol % to 5.3 mol %.

6. The glass composition according to claim 1 , wherein
the glass composition contains, as the oxides of alkaline earth metals, CaO and BaO.

7. The glass composition for according to claim 6 , wherein out of the oxides of alkaline earth metals,
the content of CaO falls within a range of 2.0 mol % to 7.6 mol %, and
the content of BaO falls within a range of 3.7 mol % to 5.9 mol %.

8. The glass composition according to claim 1 , wherein
the glass composition further contains at least one metal oxide selected from the group consisting of nickel oxide, copper oxide, manganese oxide and zirconium oxide.

9. The glass composition according to claim 8 , wherein
the content of the at least one metal oxide falls within a range of 0.01 mol % to 2.0 mol %.

10. A method of manufacturing a semiconductor device comprising, in the following order:
a first step of preparing a silicon-made semiconductor element having a pn junction exposure portion where a pn junction is exposed; and
a second step of forming a glass layer by forming a layer made of a glass composition for protecting a semiconductor junction such that the layer covers the pn junction exposure portion and by baking the layer made of the glass composition for protecting a semiconductor junction, wherein
in the second step, the glass layer is formed using the glass composition for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein the glass composition further contains nickel oxide, the content of SiO 2 falls within a range of 49.5 mol % to 64.3 mol %, the content of B 2 O 3 falls within a range of 8.4 mol % to 17.9 mol %, the content of Al 2 O 3 falls within a range of 3.7 mol % to 14.8 mol %, the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %, and the content of the oxide of alkaline earth metal falls within a range of 7.4 mol % to 12.9 mol %, and an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10 −6 to 4.13×10 −6 .

11. The method of manufacturing a semiconductor device according to claim 10 , wherein
the first step includes:
a step of preparing a semiconductor base body having a pn junction parallel to a main surface; and
a step of forming the pn junction exposure portion in the inside of a trench by forming the trench from one surface of the semiconductor base body with a depth exceeding the pn junction, and

the second step includes a step of forming the glass layer such that the glass layer covers the pn junction exposure portion in the inside of the trench.

12. The method of manufacturing a semiconductor device according to claim 11 , wherein the second step includes a step of forming the glass layer such that the glass layer directly covers the pn junction exposure portion in the trench.

13. The method of manufacturing a semiconductor device according to claim 11 , wherein the second step includes
a step of forming an insulation layer over the pn junction exposure portion in the trench, and
a step of forming the glass layer such that the glass layer covers the pn junction exposure portion with the insulation layer interposed therebetween.

14. The method of manufacturing a semiconductor device according to claim 10 , wherein
the first step includes a step of forming the pn junction exposure portion on a surface of a semiconductor base body, and
the second step includes a step of forming the glass layer such that the glass layer covers the pn junction exposure portion on the surface of the semiconductor base body.

15. The method of manufacturing a semiconductor device according to claim 14 , wherein the second step includes a step of forming the glass layer such that the glass layer directly covers the pn junction exposure portion on the surface of the semiconductor base body.

16. The method of manufacturing a semiconductor device according to claim 14 , wherein the second step includes
a step of forming an insulation layer on the pn junction exposure portion on a surface of the semiconductor base body, and
a step of forming the glass layer such that the glass layer covers the pn junction exposure portion with the insulation layer interposed therebetween.

17. A semiconductor device comprising:
a silicon-made semiconductor element having a pn junction exposure portion where a pn junction is exposed; and
a glass layer which is formed by forming a layer made of a glass composition for protecting a semiconductor junction such that the layer covers the pn junction exposure portion and by baking the layer made of the glass composition for protecting a semiconductor junction, wherein
the glass layer is formed using the glass composition for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein the glass composition further contains nickel oxide, the content of SiO 2 falls within a range of 49.5 mol % to 64.3 mol %, the content of B 2 O 3 falls within a range of 8.

Assignees

• Muyari Koya
• Ito Koji
• Ogasawara Atsushi
• Ito Kazuhiko
• Shindengen Electric Mfg

Inventors

• Muyari Koya
• Ito Koji
• Ogasawara Atsushi
• Ito Kazuhiko

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6536

  by exposure to radiation, e.g. visible light · CPC title