Methods of removing fins for finfet semiconductor devices

Patent metadata

Field	Value
Publication number	US-9318342-B2
Application number	US-201514811987-A
Country	US
Kind code	B2
Filing date	Jul 29, 2015
Priority date	Mar 3, 2014
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

One illustrative method disclosed herein includes forming a plurality of initial fins in a substrate, wherein at least one of the initial fins is a to-be-removed fin, forming a material adjacent the initial fins, forming a fin removal masking layer above the plurality of initial fins, removing a desired portion of the at least one to-be-removed fin by: (a) performing a recess etching process on the material to remove a portion, but not all, of the material positioned adjacent the sidewalls of the at least one to-be-removed fin, (b) after performing the recess etching process, performing a fin recess etching process to remove a portion, but not all, of the at least one to be removed fin and (c) repeating steps (a) and (b) until the desired amount of the at least one to-be-removed fin is removed.

First claim

What is claimed is:

1. A method, comprising:
forming a trench patterning hard mask layer above a surface of a semiconductor substrate;
performing at least one first etching process through said trench patterning hard mask layer to define a plurality of trenches in said semiconductor substrate to thereby define a plurality of initial fins in said substrate, wherein at least one of said initial fins is a to-be-removed fin;
forming a layer of insulating material within said trenc…

Assignees

• Globalfoundries Inc

Inventors

• Xie Ruilong
• Knorr Andreas
• Jacob Ajey Poovannummoottil
• Hargrove Michael

Classifications

• H10P50/695

  Electricity · mapped topic

• H10P50/692

  Electricity · mapped topic

• H10P50/694 Primary

  Electricity · mapped topic

• H10D30/62

  Electricity · mapped topic

• H10D84/0158 Primary

  Electricity · mapped topic