Signs-of-deterioration detector for semiconductor laser

Patent metadata

Field	Value
Publication number	US-9316531-B2
Application number	US-201213597962-A
Country	US
Kind code	B2
Filing date	Aug 29, 2012
Priority date	Sep 6, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A signs-of-deterioration detector for a semiconductor laser includes a first light receiving section that acquires first information relating to an optical output of the semiconductor laser and a second light receiving section that acquires second information relating to an intensity distribution of the emission pattern below the lasing threshold of the semiconductor laser. The detector also includes a holding section that holds the first information and the second information at a predetermined time point T 1 . The detector further includes a deciding section that decides the presence or absence of signs of rapid decrease of the optical output of the semiconductor laser by comparing the first information and the second information at at least one time point Tn (T 1 <Tn), with those at the time point T 1.

First claim

What is claimed is:

1. A signs-of-deterioration detector for a semiconductor laser comprising:
a first light receiving section that acquires first information relating to an optical output of the semiconductor laser at a first time point and second information relating to an optical output of the semiconductor laser at a second time point, later than the first time point;
a second light receiving section that acquires third information relating to an intensity distribution of an emission pattern of the semiconductor laser below a lasing threshold of the semiconductor laser at a third time point which is different from the first time point and is earlier than the second time point and fourth information relating to an intensity distribution of an emission pattern of the semiconductor laser below a lasing threshold of the semiconductor laser at a fourth time point which is different from the second time point and is later than the first time point and the third time point;
a holding section that holds the first information acquired by the first light receiving section and the third information acquired by the second light receiving section;
a deciding section that decides presence or absence of signs of decrease of the optical output of the semiconductor laser, by comparing the first information held by the holding section with the second information acquired by the first light receiving section and also comparing the third information held by the holding section with the fourth information acquired by the second light receiving section; and
an outputting section that outputs a signal from the deciding section.

2. The detector according to claim 1 , wherein a wavelength filter that transmits only a given wavelength region is arranged between the semiconductor laser and the second light receiving section.

3. The detector according to claim 2 , wherein a reflector of the semiconductor laser has a reflectance which is greater than 90% in some wavelengths, and is 90% or less in other wavelengths, and
the wavelength filter is a filter that transmits light of the wavelengths for which the reflectance of the reflector of the semiconductor laser is not greater than 90%.

4. The detector according to claim 1 , wherein the third information and the fourth information refer to a half-value width of an emission intensity profile of the semiconductor laser at the third time point and at the fourth time point respectively, and signs of decrease of the optical output refers to that the half-value width of the emission intensity profile falls short of a specified value.

5. The detector according to claim 1 , wherein the semiconductor laser has a first region and a second region on a surface thereof, a surface reflectance of the second region being lower than that of a surface reflectance of the first region,
the third information and the fourth information refer to a value of integral of an emission intensity profile of the semiconductor laser at the third time point and at the fourth time point respectively in the second region and
the signs of decrease of the optical output refers to that the value of integral falls short of a specified value.

6. The detector according to claim 1 , wherein the deciding section decides the presence of signs of decrease of the optical output of the semiconductor laser when a first change is observed between the first information and the second information, and a second change is observed between the third information and the fourth information.

7. The detector according to claim 6 , wherein the expression that a second large change is observed between the third information and the fourth information refers to that a half-value width of an emission intensity profile falls short of a specified value.

8. The detector according to claim 6 , wherein the semiconductor laser has a first region and a second region on a surface thereof, a surface reflectance of the second region being lower than that of a surface reflectance of the first region,
the third information and the fourth information refer to a value of integral of the emission intensity profile at the third time point and at the fourth time point respectively in the second region, and
the expression that a second change is observed between the third information and the fourth information refers to that the value of integral falls short of a specified value.

9. The detector according to claim 1 , wherein the outputting section outputs a signal of indication for the presence of signs of decrease of the optical output of the semiconductor laser or a signal of recommendation for exchanging the semiconductor laser when a first change is not observed between the first information and the second information, and a second change is observed between the third information and the fourth information.

10. The detector according to claim 9 , wherein the expression that a first change is not observed between the first information and the second information refers to that the optical output changes within a variable range of environment temperature for an operation of the semiconductor laser.

11. The detector according to claim 9 , wherein the expression that a first change is not observed between the first information and the second information refers to that a change in the optical output is not greater than 10%.

12. The detector according to claim 9 , wherein the expression that a second large change is observed between the third information and the fourth information refers to that a half-value width of an emission intensity profile falls short of a specified value.

13. The detector according to claim 9 , wherein the semiconductor laser has a first region and a second region on a surface thereof, a surface reflectance of the second region being lower than that of a surface reflectance of the first region,
the third information and the fourth information refer to a value of integral of an emission intensity profile at the third time point and at the fourth time point respectively in the second region and the expression that a second change is observed between the third information and the fourth information refers to that the value of integral falls short of a specified value.

14. The detector according to claim 1 , wherein the deciding section decides the absence of signs of decrease of the optical output of the semiconductor laser when a first change is not observed between the first information and the second information, and a second change is not observed between the third information and the fourth information.

15. The detector according to claim 14 , wherein the expression that a first change is not observed between the first information and the second information refers to that the optical output changes within a variable range of environment temperature for the operation of an semiconductor laser.

16. The detector according to claim 14 , wherein the expression that a first change is not observed between the first information and the second information refers to that a change in the optical output is not greater than 10%.

17. The detector according to claim 1 , wherein the outputting section outputs a signal of recommendation for checking an environment of an installation of the semiconductor laser or checking a breakdown of other components installed in a system including the semiconductor laser when a first change is observed between the first information and the second information, and a second change is not observed between the third information and the fourth information.

18. The detector ac

Assignees

• Suga Takako
• Uchida Takeshi
• Canon Kk

Inventors

• Suga Takako
• Uchida Takeshi

Classifications

• H01S5/0021

  Degradation or life time measurements · CPC title

• G01J1/4257 Primary

  applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam (monitoring arrangements for lasers in general H01S3/0014) · CPC title