Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
US-9219202-B2 · Dec 22, 2015 · US
US9315726B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9315726-B2 |
| Application number | US-201414773413-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 21, 2014 |
| Priority date | Mar 26, 2013 |
| Publication date | Apr 19, 2016 |
| Grant date | Apr 19, 2016 |
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The present invention relates to mixed oxide materials, methods for their preparation, detectors for ionizing radiation and CT scanners. In particular, a mixed oxide material is proposed having the formula (Y w Tb x ) 3 Al 5-y Ga y O 12 :Ce z , wherein 0.01≦w≦0.99, 0.01≦x≦0.99, 0≦y≦3.5 and 0.001≦z≦0.10 and wherein w+x+3*z=1, whereby the mixed oxide material is doped with at least 10 ppm V.
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The invention claimed is: 1. A mixed oxide material having the formula (Y w Tb x ) 3 Al 5-y Ga y O 12 :Ce z , wherein 0.01≦w≦0.99, 0.01≦x≦0.99, 0≦y≦3.5 and 0.001≦z≦0.10 and wherein w+x+3*z=1; whereby the mixed oxide material is doped with at least 10 ppm V. 2. The mixed oxide material according to claim 1 , whereby the material is doped with 10 to 250 ppm V. 3. The mixed oxide material according to claim 1 , whereby 0.1≦w≦0.9. 4. The mixed oxide material according to claim 1 , whereby 0.1≦x≦0.9. 5. The mixed oxide material according to claim 1 , whereby 1≦y≦3.5. 6. The mixed oxide material according to claim 1 , whereby 0.005≦z≦0.05. 7. The mixed oxide material according to claim 1 , whereby the material is a single-crystalline or polycrystalline material. 8. A method for producing a mixed oxide material according to claim 1 , comprising the following steps; a) providing Y 2 O 3 , CeO 2 , Tb 4 O 7 , Al 2 O 3 and Ga 2 O 3 in proportions suitable to obtain the desired mixed oxide, b) impregnating one or several of the solids of step a) with a source of V in the desired amount, c) combining and milling the solids of step a) and step b) in the presence of a suitable dispersant, to obtain a slurry, d) drying the slurry of step c) to obtain a mixed powder, and e) sintering the mixed powder of step d) at a temperature of at least 1400° C. for at least 1 h. 9. The method according to claim 8 , whereby in step c) a flux material is added when combining the solids of step a) and step b). 10. A scintillator comprising a mixed oxide material according to claim 1 . 11. A detector for ionizing radiation comprising a mixed oxide material according to claim 1 or a scintillator in combination with at least one photodetector. 12. A CT scanner comprising at least one detector according to claim 11 .
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