Junction-functionalized block copolymers

Patent metadata

Field	Value
Publication number	US-9315637-B2
Application number	US-201414573491-A
Country	US
Kind code	B2
Filing date	Dec 17, 2014
Priority date	Dec 20, 2013
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Junction-functionalized block copolymers can be used in forming nanostructures. A junction-functionalized block copolymer can include a first polymer block joined to a second polymer block by a junction, where the junction includes one or more electrostatically charged moieties. The block copolymer can include a moiety of formula (I):

A-J-B  (I)

where A is a first polymer block, B is a second polymer block, where the A block and the B block are chemically dissimilar, and J is a junction linking the A block to the B block, and including one or more electrostatically charged moieties.

First claim

What is claimed is:

1. A block copolymer comprising a moiety of formula (I):
A-J-B  (I)

wherein
A is a first polymer block;
B is a second polymer block, wherein the A block and the B block are chemically dissimilar; and
J is a junction linking the A block to the B block and including one or more electrostatically charged moieties.

2. The block copolymer of claim 1 , wherein the A block and the B block are each independently selected from a poly((meth)acrylate), a poly(styrene), a poly(alkylene oxide), and a poly(siloxane).

3. The block copolymer of claim 1 , wherein J is an N-alkyl triazolium moiety.

4. The block copolymer of claim 1 , wherein J is an oligomeric segment including from 1 to 10 electrostatically charged moieties.

5. The block copolymer of claim 1 , wherein the A block includes a poly((meth)acrylate), a poly(styrene), a poly(alkylene oxide), a poly(2-vinylpyridine), or poly(lactide) and the B block includes a poly(siloxane).

6. The block copolymer of claim 5 , wherein the A block is poly(methyl methacrylate) and the B block is poly(dimethylsiloxane).

7. The block copolymer of claim 1 , comprising a counterion selected from the group consisting of F − , Cl − , Br − , I − , BF 4 − , PF 6 − , Tf 2 N − , OTf − and SbF 6 − .

8. The block copolymer of claim 1 , further comprising a third block.

9. A composite structure for forming a patterned substrate, comprising:
a substrate; and
a layer including a block copolymer material formed on at least a portion of a surface of said substrate,
wherein said block copolymer material includes a moiety of formula (I):
A-J-B  (I)

wherein
A is a first polymer block;
B is a second polymer block, wherein the A block and the B block are chemically dissimilar; and
J is a junction linking the A block to the B block and including one or more electrostatically charged moieties;
wherein said substrate becomes said patterned substrate after processing said composite structure.

10. The composite structure of claim 9 , wherein said substrate comprises a plurality of material layers.

11. The composite structure of claim 9 , wherein the A block and the B block are each independently selected from a poly((meth)acrylate), a poly(styrene), a poly(alkylene oxide), and a poly(siloxane).

12. The composite structure of claim 9 , wherein J is an N-alkyl triazolium moiety.

13. The composite structure of claim 9 , wherein J is an oligomeric segment including from 1 to 10 electrostatically charged moieties.

14. The composite structure of claim 9 , wherein the A block includes a poly((meth)acrylate), a poly(styrene), or a poly(alkylene oxide), and the B block includes a poly(siloxane).

15. The composite structure of claim 14 , wherein the A block is poly(methyl methacrylate) and the B block is poly(dimethylsiloxane).

16. A method for forming a patterned substrate comprising the steps of:
(a) providing a substrate;
(b) forming a layer including a block copolymer material on at least a portion of a surface of said substrate, wherein said block copolymer material includes a moiety of formula (I):
A-J-B  (I)

wherein
A is a first polymer block;
B is a second polymer block, wherein the A block and the B block are chemically dissimilar; and
J is a junction linking the A block to the B block and including one or more electrostatically charged moieties;
(c) exposing the layer to an etching process, wherein the etching process exposes a pattern of regions of the substrate; and
(d) exposing the pattern of regions of substrate material to a second etching process selected for its ability to etch the layer of substrate exposed by step (c).

17. The method of claim 16 , wherein the pattern has features between about 5 nm and about 100 nm in size.

18. The method of claim 16 , further comprising annealing the mask material on the substrate.

Assignees

• Univ California

Inventors

• Montarnal Damien
• Luo Yingdong
• Hawker Craig J
• Kramer Edward J
• Frederickson Glenn H

Classifications

• C08F293/00

  Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule (on to polymers modified by introduction of unsaturated end groups C08F290/02) · CPC title

• B44C1/227

  by etching · CPC title

• C08G81/024 Primary

  Block or graft polymers containing sequences of polymers of C08C or C08F and of polymers of C08G · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• Y10T428/31663

  As siloxane, silicone or silane · CPC title