Low-e panels with ternary metal oxide dielectric layer and method for forming the same

US9315414B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9315414-B2
Application numberUS-201514701053-A
CountryUS
Kind codeB2
Filing dateApr 30, 2015
Priority dateDec 27, 2011
Publication dateApr 19, 2016
Grant dateApr 19, 2016

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  1. Title

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  5. First independent claim

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Abstract

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Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.

First claim

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What is claimed: 1. A method for forming a low-e panel, the method comprising: providing a transparent substrate; forming a metal oxide layer over the transparent substrate, wherein the metal oxide layer comprises oxygen, a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium; and forming a reflective layer over the transparent substrate. 2. The method of claim 1 , wherein the metal oxide layer further comprises nitrogen. 3. The method of claim 1 , wherein the reflective layer is formed over the metal oxide layer. 4. The method of claim 3 , further comprising forming a second metal oxide layer over the reflective layer, the second metal oxide layer comprising a fourth element, a fifth element, and a six element, wherein the fourth element is tin or zinc, the fifth element is strontium, and the sixth element is hafnium. 5. The method of claim 4 , wherein the first element is the same as the fourth element. 6. The method of claim 5 , wherein the reflective layer comprises silver. 7. The method of claim 1 , wherein the forming of the metal oxide layer comprises sputtering particles of the first element, the second element, and the third element from a single target. 8. The method of claim 1 , wherein the transparent substrate comprises glass. 9. The method of claim 4 , further comprising forming a zinc oxide layer between the metal oxide layer and the reflective layer. 10. The method of claim 9 , further comprising forming a metal alloy layer between the reflective layer and the second metal oxide layer. 11. A method for forming a low-e panel, the method comprising: providing a transparent substrate; forming a metal oxynitride layer over the transparent substrate, the metal oxynitride layer comprising a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium; and forming a silver layer over the transparent substrate. 12. The method of claim 11 , wherein the silver layer is formed over the metal oxynitride layer. 13. The method of claim 12 , further comprising forming a second metal oxynitride layer over the reflective layer, the second metal oxynitride layer comprising a fourth element, a fifth element, and a six element, wherein the fourth element is tin or zinc, the fifth element is strontium, and the sixth element is hafnium. 14. The method of claim 11 , wherein the forming of the metal oxynitride layer comprises sputtering particles of the first element, the second element, and the third element from a single target. 15. The method of claim 11 , wherein the forming of the metal oxynitride layer comprises simultaneously sputtering particles of the first element, the second element, and the third element from more than one target. 16. A method for forming a low-e panel, the method comprising: providing a transparent substrate; forming a first metal oxide layer over the transparent substrate, wherein the first metal oxide layer comprises oxygen, a first element, a second element, and a third element, wherein the first element is tin or zinc, the second element is strontium, and the third element is hafnium; forming a reflective layer over the first metal oxide layer; and forming a second metal oxide layer over the reflective layer, wherein the second metal oxide layer is made of the same material as the first metal oxide. 17. The method of claim 16 , wherein the reflective layer comprising silver. 18. The method of claim 17 , wherein the transparent substrate comprises glass. 19. The method of claim 16 , wherein the first metal oxide layer further comprises nitrogen. 20. The method of claim 16 , further comprising: forming a zinc oxide layer between the first metal oxide layer and the reflective layer; and forming a metal alloy layer between the reflective layer and the second metal oxide layer.

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What does patent US9315414B2 cover?
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second eleme…
Who is the assignee on this patent?
Intermolecular Inc, Intermolecular Inc, Guardian Industries
What technology area does this patent fall under?
Primary CPC classification C03C17/366. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).