Graphene base and method of preparing the same

Patent metadata

Field	Value
Publication number	US-9315387-B2
Application number	US-81579110-A
Country	US
Kind code	B2
Filing date	Jun 15, 2010
Priority date	Aug 5, 2009
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.

First claim

What is claimed is:

1. A graphene base, comprising:
a substrate;
a graphitization catalyst layer disposed on the substrate; and
graphene disposed between the substrate and the graphitization catalyst layer,
wherein the graphene is formed directly on the at least one surface of the substrate, and at least about 90 percent of an area of the graphene does not have a wrinkle,
wherein the substrate comprises a glass, gallium nitride, a plastic, polyethylene terephthalate, polyester sulfone, polyethylene napthalate, silica, silicon/silica or a combination thereof,
wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium, and
wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.

2. The graphene base of claim 1 , wherein a ratio of a peak D-band intensity to a peak G-band intensity of the graphene is equal to or less than about 0.5, in a Raman spectrum of the graphene.

3. The graphene base of claim 1 , wherein a ratio of an area of a D-band peak to an area of a G-band peak of the graphene is equal to or less than about 0.5, in a Raman spectrum of the graphene.

4. The graphene base of claim 1 , wherein the graphene has a patterned shape.

5. The graphene base of 1 , wherein a thickness of the graphitization catalyst layer is about 1 nanometer to about 1 micrometer.

6. The graphene base of claim 1 , wherein a pattern layer is disposed on the at least one surface of the substrate before the graphene is formed on the substrate.

7. The graphene base of claim 6 , wherein the graphene is formed according to a shape of the pattern layer on the substrate.

8. The graphene base of claim 1 , wherein at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle disposed on the surface of the substrate.

9. An electrical device, comprising:
a graphene base, the graphene base comprising
a substrate;
a graphitization catalyst layer disposed on the substrate; and
graphene disposed between the substrate and the graphitization catalyst layer;
wherein the graphene is formed directly on the at least one surface of the substrate, and at least about 90 percent of an area of the graphene does not have a wrinkle,
wherein the substrate comprises a glass, gallium nitride, a plastic, polyethylene terephthalate, polyester sulfone, polyethylene napthalate, silica, silicon/silica or a combination thereof,
wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium, and

wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.

Assignees

• Shin Hyeon-Jin
• Choi Won-Mook
• Choi Jae-Young
• Yoon Seon-Mi
• Samsung Electronics Co Ltd

Inventors

• Shin Hyeon-Jin
• Choi Won-Mook
• Choi Jae-Young
• Yoon Seon-Mi

Classifications

• H01J2201/30461

  Graphite · CPC title

• C01B31/0206

  Chemistry & Metallurgy · mapped topic

• H01J2329/0449

  Graphite · CPC title

• C01B31/0446 Primary

  Chemistry & Metallurgy · mapped topic

• C01B31/0484

  Chemistry & Metallurgy · mapped topic