Methods for vacuum assisted underfilling

Patent metadata

Field	Value
Publication number	US-9314882-B2
Application number	US-201414215559-A
Country	US
Kind code	B2
Filing date	Mar 17, 2014
Priority date	Jan 11, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Methods for applying an underfill with vacuum assistance. The method may include dispensing the underfill onto a substrate proximate to at least one exterior edge of an electronic device attached to the substrate. A space between the electronic device and the substrate is evacuated through at least one gap in the underfill. The method further includes heating the underfill to cause the underfill to flow into the space. Because a vacuum condition is supplied in the open portion of the space before flow is initiated, the incidence of underfill voiding is lowered.

First claim

What is claimed is:

1. A method of providing an underfill on a substrate having a surface to which an electronic device is mounted by electrically conductive joints and is separated from the substrate by a space, the space having an open portion that is unoccupied by the electrically conductive joints, the method comprising:
cooling the underfill;
receiving the substrate with the surface in a plasma-treated condition;
providing, after cooling the underfill, the underfill on the substrate along an exterior edge of the electronic device;
evacuating the space to provide a vacuum condition in the open portion of the space; and
after evacuating the space to provide the vacuum condition and while the vacuum condition is being maintained, causing flow of the underfill toward the exterior edge and into the open portion of the space,
wherein the plasma-treated condition of the surface reduces trapping of gas under the underfill provided on the substrate.

2. The method of claim 1 , wherein the plasma treating activates a surface of the substrate to change the wettability thereof.

3. The method of claim 1 , wherein the plasma treating activates the surface of the substrate by altering a composition thereof.

4. The method of claim 1 , further comprising:
after exposing the surface of the substrate to the plasma-treating, mounting the electronic device via the electrically conductive joints on the surface of the substrate.

5. The method of claim 1 , wherein providing the underfill on the substrate comprises dispensing the underfill onto the substrate.

6. The method of claim 1 , wherein providing the underfill on the substrate comprises placing a solid underfill onto the substrate.

7. The method of claim 1 , further comprising after evacuating the space to provide the vacuum condition, heating the underfill to a first temperature above room temperature.

8. A method of providing an underfill on a substrate upon which an electronic device is mounted by electrically conductive joints and is separated from the substrate by a space, the space having an open portion that is unoccupied by the electrically conductive joints, the method comprising:
cooling the underfill;
providing, after cooling the underfill, the underfill onto the substrate proximate to at least one exterior edge of the electronic device;
evacuating the space to provide a vacuum condition in the open portion of the space; and
after evacuating the space to provide the vacuum condition and while the vacuum condition is being maintained, causing flow of the underfill from the at least one exterior edge into the open portion of the space.

9. The method of claim 8 , wherein cooling the underfill comprises before the underfill is provided onto the substrate, cooling the underfill to a second temperature below room temperature.

10. The method of claim 8 , further comprising before the underfill is provided onto the substrate, cooling the substrate such that the underfill cools to a second temperature below room temperature when provided onto the substrate.

11. The method of claim 8 , wherein the vacuum condition is a sub-atmospheric pressure that does not significantly modify the physical properties of the underfill.

12. The method of claim 8 , wherein the vacuum condition is a sub-atmospheric pressure greater than or equal to 95 Torr.

13. The method of claim 8 , wherein the underfill is a solid underfill configured to be brought to a temperature above its melting point to cause the flow of the underfill.

14. The method of claim 8 , wherein at least one gap is provided in the underfill, and the space is evacuated through the at least one gap.

15. The method of claim 8 , wherein no gap is provided in the underfill, and the space is evacuated through bubbles through the underfill while the vacuum condition is being applied.

16. The method of claim 8 , wherein the electrically conductive joints are reflowed solder balls.

17. The method of claim 8 , wherein the electrically conductive joints are copper pillars.

18. The method of claim 8 , further comprising after evacuating the space to provide the vacuum condition, heating the underfill to a first temperature above room temperature.

19. The method of claim 18 , wherein the first temperature ranges from 30° C. to 120° C.

Assignees

• Nordson Corp

Inventors

• Babiarz Alec J
• Quinones Horatio
• Ratledge Thomas L
• Zhao Jiangang

Classifications

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title