Imaging sensors

US9313428B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9313428-B2
Application numberUS-201414574383-A
CountryUS
Kind codeB2
Filing dateDec 17, 2014
Priority dateDec 26, 2013
Publication dateApr 12, 2016
Grant dateApr 12, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for operating a light detection circuit comprising a first node, a second node, and a photodiode, the method comprising: accumulating charge carriers via the photodiode; while the photodiode is accumulating the charge carriers: (i) connecting a reset voltage to the second node and connecting the second node to the first node; (ii) isolating the second node from the reset voltage and isolating the first node from the second node, thereby generating a reference voltage at the first node; and (iii) sampling the reference voltage; transferring, from the photodiode, a first portion of the charge carriers to the first node and a second portion of the charge carriers to the second node; sampling a first output voltage at the first node represented by the first portion of the charge carriers; distributing the second portion of the charge carriers between the first node and the second node by connecting the first node to the second node; and sampling a second output voltage represented by the first portion of the charge carriers and the second portion of the charge carriers distributed between the first node and the second node. 2. The method of claim 1 , further comprising determining a first corrected output voltage by comparing the reference voltage to the first output voltage. 3. The method of claim 1 , wherein the reference voltage is a first reference voltage, wherein the second node is isolated from the reset voltage before the first node is isolated from the second node, wherein isolating the second node from the reset voltage generates a second reference voltage at both the first node and the second node, the method further comprising: sampling the second reference voltage prior to isolating the first node from the second node. 4. The method of claim 3 , further comprising determining a second corrected output voltage by comparing the second reference voltage to the second output voltage. 5. The method of claim 3 , further comprising storing the second reference voltage and the second output voltage. 6. The method of claim 1 , further comprising storing the reference voltage and the first output voltage. 7. The method of claim 1 , further comprising: reconnecting the reset voltage to the second node, thereby connecting the first node to the reset voltage; re-isolating the first node and the second node from the reset voltage, thereby generating a third reference voltage at both the first node and the second node; and sampling the third reference voltage. 8. The method of claim 7 , further comprising determining a corrected output voltage by comparing the third reference voltage to the second output voltage. 9. A light detection circuit comprising a photodiode, a first node, a second node, a first switch, a second switch, and a third switch, the light detection circuit being configured to perform functions comprising: accumulating charge carriers via the photodiode; while the photodiode is accumulating the charge carriers: (i) connecting, via the first switch, a reset voltage to the second node and connecting, via the second switch, the second node to the first node; (ii) isolating, via the first switch, the second node from the reset voltage and isolating, via the second switch, the first node from the second node, thereby generating a reference voltage at the first node; and (iii) sampling the reference voltage; transferring, via the third switch from the photodiode, a first portion of the charge carriers to the first node and a second portion of the charge carriers to the second node; sampling a first output voltage at the first node represented by the first portion of the charge carriers; distributing, via the second switch, the second portion of the charge carriers between the first node and the second node by connecting the first node to the second node; and sampling a second output voltage represented by the first portion of the charge carriers and the second portion of the charge carriers distributed between the first node and the second node. 10. A light detection circuit comprising: a first node, a second node, and means for accumulating charge carriers; means for, while the means for accumulating the charge carriers is accumulating the charge carriers: (i) connecting a reset voltage to the second node and connecting the second node to the first node; (ii) isolating the second node from the reset voltage and isolating the first node from the second node, thereby generating a reference voltage at the first node; and (iii) sampling the reference voltage; means for transferring, from the means for accumulating the charge carriers, a first portion of the charge carriers to the first node and a second portion of the charge carriers to the second node; means for sampling a first output voltage at the first node represented by the first portion of the charge carriers; means for distributing the second portion of the charge carriers between the first node and the second node by connecting the first node to the second node; and means for sampling a second output voltage represented by the first portion of the charge carriers and the second portion of the charge carriers distributed between the first node and the second node.

Assignees

Inventors

Classifications

  • H04N25/59Primary

    by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title

  • involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling · CPC title

  • H04N25/621Primary

    for the control of blooming · CPC title

  • Detection or reduction of inverted contrast or eclipsing effects · CPC title

  • comprising storage means other than floating diffusion · CPC title

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What does patent US9313428B2 cover?
Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of…
Who is the assignee on this patent?
Imec Vzw
What technology area does this patent fall under?
Primary CPC classification H04N25/59. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).