Glitch suppression in an amplifier

Patent metadata

Field	Value
Publication number	US-9312848-B2
Application number	US-201414511800-A
Country	US
Kind code	B2
Filing date	Oct 10, 2014
Priority date	Jun 30, 2014
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A driver circuit includes detectors responsive to the operating region that a driven switch is operating in. The driver circuit is operative to drive the gate of the driven switch at a speed responsive to the output of the detectors.

First claim

We claim the following:

1. A circuit comprising:
a transistor device having first and second terminals and a control terminal, the first terminal for a connection to an input voltage, the second terminal for a connection to an electrical load; and
a driver circuit connected to the transistor device and operative to drive the transistor device in response to an input signal provided to the driver circuit, the driver circuit comprising:
a first switch having first and second terminals, the first terminal connected to the control terminal of the transistor device, the first switch further having a control terminal for a connection to a source of the input signal;
a plurality of second switches arranged in parallel and connected between a first node and a second node, the first node connected to the second terminal of the first switch, the second node connectable to a first voltage potential; and
a region detector circuit connected to the transistor device, the region detector circuit operative to generate output signals responsive to an operating region of the transistor device,
the second switches connected to the region detector circuit, the output signals of the region detector circuit operative to control one or more of the second switches.

2. The circuit of claim 1 wherein the region detector circuit is further operative to generate a first output signal in response the transistor device transitioning from a first operating region to a second operating region and to generate a second output signal in response the transistor device transitioning from the second operating region to a third operating region.

3. The circuit of claim 1 wherein the control terminal of the first switch is connected to a first one of the second switches.

4. The circuit of claim 1 wherein the first terminal of the first switch is connected to a second voltage potential.

5. The circuit of claim 1 further comprising a third switch having first and second terminals and a control terminal, the first terminal connected to a second voltage potential, the second terminal connected to the control terminal of the transistor device, the control terminals of the first and third switches connected together.

6. The circuit of claim 1 wherein the transistor device and the driver circuit are components on an integrated circuit (IC) die.

7. The circuit of claim 1 wherein the region detection circuit is operative to sense a current flow across the first and second terminals of the transistor device.

8. The circuit of claim 1 wherein the region detection circuit comprises a current detector and a comparator connected to the current detector, the output signals of the region detection circuit comprising an output of the comparator.

9. The circuit of claim 8 wherein the region detection circuit further comprises a second current detector and a second comparator connected to the second current detector, the output signals of the region detection circuit further comprising an output of the second comparator.

10. The circuit of claim 8 wherein the region detection circuit further comprises an amplifier connected to the comparator, the output signals of the region detection circuit further comprising an output of the amplifier.

11. A circuit comprising:
first means for driving a control terminal of a transistor device;
second means, connected to the transistor device, for generating one or more control signals responsive to an operating region in which the transistor device is operating;
third means, connected to the first means and to the second means, for varying a current flow through the first means responsive to the one or more control signals from the second means,
wherein the second means generates a first control signal in response the transistor device transitioning from a first operating region to a second operating region and generates a second control signal in response the transistor device transitioning from the second operating region to a third operating region.

12. The circuit of claim 11 wherein the first operating region of the transistor device is a cutoff region, wherein the second operating region of the transistor device is a saturation region, wherein the third operating region of the transistor device is a linear region.

13. The circuit of claim 11 further comprising the transistor device, the first means connected to the control terminal of the transistor device.

14. The circuit of claim 11 wherein the circuit is disposed on an IC die.

15. The circuit of claim 11 wherein the second means comprises a current detector and a comparator connected to the current detector, the output signals of the region detection circuit comprising an output of the comparator.

16. The circuit of claim 11 wherein the second means further comprises an amplifier connected to the comparator, the output signals of the region detection circuit further comprising an output of the amplifier.

17. The circuit of claim 11 wherein the second means further comprises a second current detector and a second comparator connected to the second current detector, the output signals of the region detection circuit further comprising an output of the second comparator.

18. A circuit comprising:
first and second output devices for a connection to a load;
a first driver connected to a control terminal of the first output device;
a second driver connected to a control terminal of the second output device;
a plurality of switches arranged in parallel and connected between a first node and a second node, the first node connected to the second terminal of the driver, the second node connectable to a first voltage potential;
a detector circuit connected to the first output device, the detector circuit operative to generate output signals responsive to an operating region of the first output device, the switches connected to the detector circuit, the output signals of the detector circuit operative to control one or more of the switches; and
a buffer connected to the second driver and receiving one of the output signals from the detector circuit, the buffer operative to enable the second driver in response to said one of the output signals.

19. The circuit of claim 18 wherein the region detector circuit is further operative to generate a first output signal in response the transistor device transitioning from a first operating region to a second operating region and to generate a second output signal in response to the transistor device transitioning from the second operating region to a third operating region.

20. The circuit of claim 18 wherein the detector circuit comprises a current detector and a comparator connected to the current detector, the output signals of the region detection circuit comprising an output of the comparator.

Assignees

• Qualcomm Inc
• Qualcomm Inc

Inventors

• Zhang Xinwang
• Dhanasekaran Vijayakumar
• Wang Le
• Srivastava Ankit

Classifications

• H03F2200/372

  Noise reduction and elimination in amplifier · CPC title

• H03F1/26

  Modifications of amplifiers to reduce influence of noise generated by amplifying elements · CPC title

• H03K17/161 Primary

  in field-effect transistor switches · CPC title

• H03K2217/0072

  Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load · CPC title

• H03K17/167

  using parallel switching arrangements · CPC title