Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9312507B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312507-B2 |
| Application number | US-201113150564-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2011 |
| Priority date | Dec 5, 2001 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
Opening claim text (preview).
What is claimed is: 1. A light-emitting device comprising: an anode; a first electroluminescent layer over the anode; a layer over the first electroluminescent layer, the layer consisting of one of molybdenum oxide, vanadium oxide, and niobium oxide; a second electroluminescent layer over the layer; and a cathode over the second electroluminescent layer, wherein each of the first electroluminescent layer and the second electroluminescent layer comprises a hole transporting layer and an electron transporting layer over the hole transporting layer. 2. The light-emitting device according to claim 1 , wherein the layer consists of molybdenum oxide. 3. The light-emitting device according to claim 1 , wherein the layer consists of vanadium oxide. 4. The light-emitting device according to claim 1 , wherein the light-emitting device is capable of emitting white light. 5. The light-emitting device according to claim 1 , wherein the first electroluminescent layer and the second electroluminescent layer emit light with different color so that the light-emitting device is capable of emitting white light. 6. The light-emitting device according to claim 1 , wherein at least one of the first electroluminescent layer and the second electroluminescent layer emits light from a triplet excited state. 7. A light-emitting device comprising: an anode; a first electroluminescent layer over the anode; a first layer over the first electroluminescent layer, the first layer comprising an electron transporting material and a donor to the electron transporting material; a second layer over the first layer, the second layer consisting of one of molybdenum oxide, vanadium oxide, and niobium oxide; a second electroluminescent layer over the second layer; and a cathode over the second electroluminescent layer, wherein each of the first electroluminescent layer and the second electroluminescent layer comprises a hole transporting layer and an electron transporting layer over the hole transporting layer. 8. The light-emitting device according to claim 7 , wherein the second layer consists of molybdenum oxide. 9. The light-emitting device according to claim 7 , wherein the second layer consists of vanadium oxide. 10. The light-emitting device according to claim 7 , wherein the donor is selected from an alkali metal and an alkali earth metal. 11. The light-emitting device according to claim 7 , wherein the donor is selected from a Lewis base. 12. The light-emitting device according to claim 7 , wherein the light-emitting device is capable of emitting white light. 13. The light-emitting device according to claim 7 , wherein the first electroluminescent layer and the second electroluminescent layer emit light with different color so that the light-emitting device is capable of emitting white light. 14. The light-emitting device according to claim 7 , wherein at least one of the first electroluminescent layer and the second electroluminescent layer emits light from a triplet excited state.
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