Magnetic devices and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9312478-B2
Application number	US-201213589708-A
Country	US
Kind code	B2
Filing date	Aug 20, 2012
Priority date	Dec 7, 2011
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.

First claim

What is claimed is:

1. A method of manufacturing a magnetic device, the method comprising:
etching a stack structure including at least one magnetic layer by using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas;
wherein the hydrogen-containing gas includes at least one selected from CH 4 gas, H 2 gas and a combination thereof.

2. The method of claim 1 , wherein the hydrogen-containing gas is CH 4 gas, and
the etching gas includes about 70 to about 98 volume percent of the CH 4 gas and about 2 to about 30 volume percent of the CO gas.

3. The method of claim 1 , wherein the hydrogen-containing gas is H 2 , and
the etching gas includes about 70 to about 98 volume percent of the H 2 gas and 2 to 30 volume percent of the CO gas.

4. The method of claim 1 , wherein the etching gas further includes an additional gas including at least one selected from He, Ne, Ar, Kr, Xe and combinations thereof.

5. The method of claim 1 , wherein the etching of the stack structure is performed at a temperature of about −10° C. to about 20° C.

6. The method of claim 1 , wherein halogen elements are excluded from the etching gas.

7. The method of claim 1 , wherein the stack structure includes at least one selected from Co/Pd, Co/Pt, Co/Ni, Fe/Pd, Fe/Pt, MgO, PtMn, IrMn, a CoFe alloy, a CoFeB alloy and combinations thereof.

8. The method of claim 1 , wherein the etching of the stack structure includes,
plasma etching using a plasma etching apparatus including a source power output unit configured for applying a source power and a bias power output unit configured for applying a bias power, and
repeatedly alternating at least one power of the source power and the bias power between an on state and an off state.

9. The method of claim 1 , wherein the etching of the stack structure includes,
plasma etching using a plasma etching apparatus including a source power output unit configured for applying a source power and a bias power output unit configured for applying a bias power, and
applying the source power in a constant mode and the bias power in a pulsed mode alternating between an on state and an off state.

10. The method of claim 1 , further comprising:
exposing a region to be etched of the stack structure to a hydrogen plasma prior to the etching the stack structure.

11. The method of claim 1 , wherein the stack structure includes a lower magnetic layer, a tunneling barrier layer, and an upper magnetic layer, which are sequentially stacked, and
the etching of the stack structure includes plasma etching the lower magnetic layer, the tunneling barrier layer, and the upper magnetic layer, respectively, using the etching gas to form a magnetic resistive device.

12. The method of claim 11 , further comprising:
forming a mask pattern on the stack structure,
wherein the etching of the stack structure includes using the mask pattern as an etching mask.

13. The method of claim 11 , further comprising:
exposing an exposed surface of the magnetic resistive device to an oxygen plasma, after the etching of the stack structure.

14. A method of manufacturing a magnetic device, comprising:
forming a stack structure including at least one magnetic layer; and
etching the at least one magnetic layer by exposing the at least one magnetic layer to an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas:
wherein the hydrogen-containing gas includes at least one selected from CH 4 gas, H 2 gas and a combination thereof.

15. The method of claim 14 , wherein the at least one magnetic layer includes at least one selected from Pt, Pd, Ni, Mn, Co, Mg, Fe, Ir and combinations thereof.

16. The method of claim 14 , wherein the removing of the portion of the at least one magnetic layer forms a plurality of magnetic resistive devices each having a width of about 20 nm or less.

17. The method of claim 14 , wherein the etching gas includes at least 80 volume percent of the hydrogen-containing gas and at least 10 volume percent of the CO gas.

18. The method of claim 14 , wherein the at least one magnetic layer includes a perpendicular magnetic anisotropy material.

Assignees

• Lee Hak-Sun
• Ken Tokashiki
• Kim Myeong-Cheol
• Kwon Hyung-Joon
• Lee Sang-Min
• Lee Woo-Cheol
• Jung Myung-Hoon
• Samsung Electronics Co Ltd

Inventors

• Lee Hak-Sun
• Ken Tokashiki
• Kim Myeong-Cheol
• Kwon Hyung-Joon
• Lee Sang-Min
• Lee Woo-Cheol
• Jung Myung-Hoon

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01L21/3065

  Electricity · mapped topic

• Y10T428/24479

  including variation in thickness · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• G11B5/3163

  Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers · CPC title