Light extraction product for semiconductor light emitting device and light emitting device
US-2015076468-A1 · Mar 19, 2015 · US
LED with multilayer light extractor having a refractive index gradient
US9312445B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312445-B2 |
| Application number | US-201414334540-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 17, 2014 |
| Priority date | Jul 18, 2013 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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Abstract
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The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting device comprising: a first semiconductor layer; a second semiconductor layer; an active layer provided between the first semiconductor layer and the second semiconductor layer; a first light extraction layer provided on the first semiconductor layer and including a first nitride semiconductor; and a second light extraction layer provided between the first light extraction layer and the first semiconductor layer and including a second…
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Classifications
Electricity · mapped topic
- H10H20/811Primary
Electricity · mapped topic
Electricity · mapped topic
- H10H20/825Primary
Electricity · mapped topic
- H10H20/819Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9312445B2 cover?
- The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refrac…
- Who is the assignee on this patent?
- Lg Innotek Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/811. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).