Semiconductor light device and manufacturing method for the same

Patent metadata

Field	Value
Publication number	US-9312443-B2
Application number	US-201314045550-A
Country	US
Kind code	B2
Filing date	Oct 3, 2013
Priority date	Apr 5, 2011
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

First claim

What is claimed is:

1. A semiconductor light device, comprising:
a semiconductor substrate having a first conduction type;
a first cladding layer having the first conduction type and deposited above the semiconductor substrate;
an active layer deposited above the first cladding layer;
a second cladding layer having a second conduction type and deposited above the active layer; and
a contact layer deposited on the second cladding layer,
wherein
the active layer includes
a window portion that is disordered via diffusion of vacancies, and
a non-window portion having less disordering than the window portion,

the contact layer includes
a first region, and
a second region that is below the first region and has greater affinity for hydrogen than the first region,

the second region has
a first hydrogen concentration in a region corresponding to the non-window portion, and
a second hydrogen concentration in a region corresponding to the window portion,

the first hydrogen concentration is higher than the second hydrogen concentration, and
the first hydrogen concentration in the region corresponding to the non-window portion is greater than 8.0E+16 atoms/cm 3 .

2. The semiconductor light device according to claim 1 , wherein
the second region is formed at a lower growth temperature than a growth temperature for forming the first region.

3. The semiconductor light device according to claim 1 , wherein
the first region includes a p-type GaAs layer doped with a first p-type dopant,
the second region includes a p-type GaAs layer doped with a second p-type dopant, and
the second p-type dopant has greater affinity for hydrogen than the first p-type dopant.

4. The semiconductor light device according to claim 3 , wherein
the contact layer further includes a third region in which a doping amount of the first p-type dopant is less than a doping amount of the first p-type dopant in the first region, and
the second region is between the first region and the third region.

5. The semiconductor light device according to claim 3 , wherein
the first p-type dopant includes Zn, Mg, or Be.

6. The semiconductor light device according to claim 3 , wherein
the second p-type dopant includes carbon.

7. The semiconductor light device according to claim 3 , wherein
the total doping amount of the first and second p-type dopants in the contact layer is no greater than 1.0E+15 atoms/cm 2 .

8. The semiconductor light device according to claim 3 , wherein
a doping amount of the second p-type dopant in the second region is less than a doping amount of the first p-type dopant in the first region.

Assignees

• Furukawa Electric Co Ltd
• Furukawa Electric Co Ltd

Inventors

• Taniguchi Hidehiro
• Ohki Yutaka

Classifications

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• H01S5/3063

  using Mg · CPC title

• H10H20/8242

  characterised by the dopants · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title