Optoelectronic semiconductor device

Patent metadata

Field	Value
Publication number	US-9312435-B2
Application number	US-201113995801-A
Country	US
Kind code	B2
Filing date	Dec 1, 2011
Priority date	Dec 20, 2010
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

First claim

The invention claimed is:

1. An optoelectronic semiconductor device comprising:
a first light source that emits white-green light and comprises a semiconductor chip that emits in a blue spectral range, and a first conversion element attached directly to the semiconductor chip,
a second light source that emits red light, having a semiconductor chip that emits in the blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range,
a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, the third light source is free of a conversion element, and
a filler body having a matrix material which is a silicone and into which a conversion agent is embedded and distributed homogenously in the entire filler body, wherein
1) the filler body is disposed downstream of the light sources collectively,
2) all of the semiconductor chips of the light sources are surrounded in the lateral direction by a reflector filler at least in places, the reflector filler is formed from a silicone as a matrix material into which reflective particles are embedded,
3) the filler body is disposed downstream of the reflector filler along a main radiation direction of the semiconductor device and is applied directly onto the reflector filler,
4) the filler body covers the entire reflector filler,
5) the first conversion element converts at most 70% of the light from the semiconductor chip of the first light source,
6) the filler body converts between 30% and 80% of the light from the semiconductor chips which emit in the blue spectral range, of the first and of the third light sources and the filler body does not absorb green and red light or only absorbs it to a negligible extent,
7) the optoelectronic semiconductor device emits white mixed light formed from light from the three light sources and from the filler body, and
8) the filler body and the first conversion element comprise the same conversion agent in different concentrations.

2. The optoelectronic semiconductor device according to claim 1 , wherein the conversion agent of the filler body is in the form of particles having an average diameter of 1 μm to 15 μm, and the particles act in an absorbing manner for blue light and in a scattering manner for red and green light.

3. The optoelectronic semiconductor device according to claim 1 , wherein the filler body also includes, in addition to the conversion agent, scattering particles, wherein a refractive index difference between the matrix material and the scattering particles is at most 0.10 at a temperature of 300 K.

4. The optoelectronic semiconductor device according to claim 3 , wherein the filler body has an average thickness of 200 μm to 800 μm, and the particles of the conversion agent and the scattering particles are each distributed homogeneously in the entire filler body.

5. The optoelectronic semiconductor device according to claim 1 , wherein all of the semiconductor chips of the light sources are surrounded in the lateral direction by a reflector filler at least in places, and the filler body is disposed downstream of the reflector filler along a main radiation direction of the semiconductor device and applied at least in places directly onto the reflector filler and onto the semiconductor chip of the third light source and onto the first conversion element and onto the second conversion element.

6. The optoelectronic semiconductor device according to claim 5 , wherein the reflector filler terminates, in a direction parallel to the main radiation direction and with a tolerance of at the most 15 μm, flush with radiation main sides of the semiconductor chips of the light sources.

7. The optoelectronic semiconductor device according to claim 5 , wherein the reflector filler appears to be white and comprises reflector particles, and the reflector filler and the filler body comprise the same matrix material.

8. The optoelectronic semiconductor device according to claim 1 , wherein all of the semiconductor chips of the light sources are attached on a common carrier in a common plane, and the semiconductor chips are distributed over a surface of at least 1.5×1.5 mm 2 .

9. The optoelectronic semiconductor device according to claim 1 , wherein the light sources can be mutually independently electrically controlled, and the correlated color temperature of the white mixed light emitted by the semiconductor device during operation can be adjusted.

10. The optoelectronic semiconductor device according to claim 1 ,
wherein the light from the first light source has, prior to entering the filler body, a chromaticity co-ordinate in the CIE chromaticity diagram of 0.1≦c x ≦0.31 and 0.1≦c y ≦0.32,
wherein the semiconductor device, during operation, emits white mixed light with a correlated color temperature of 2300K to 7000 K.

11. The optoelectronic semiconductor device according to claim 1 ,
further comprising a carrier with a carrier main side onto which the semiconductor chips are mounted, wherein
1) the reflector filler extends from the carrier main side not until radiation main sides of the semiconductor chips facing away from the carrier,
2) a thickness of the first conversion element is 30 μm to 150 μm, the first conversion element is a platelet,
3) an emission spectrum of the first conversion element has a maximum intensity in the wavelength range of 550 nm to 560 nm,
4) a wavelength of maximum emission of the second conversion element is 595 nm to 610 nm, and
5) a spectral width of the emission of the second conversion element is 50 nm to 130 nm, based on a full width at half maximum.

12. An optoelectronic semiconductor device comprising:
a first light source that emits white-green light and comprises a semiconductor chip that emits in a blue spectral range, and a first conversion element attached directly to the semiconductor chip,
a second light source that emits red light, having a semiconductor chip that emits in the blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range,
a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, the third light source is free of a conversion element, and
a filler body having a matrix material which is a silicone and into which a conversion agent is embedded and distributed homogenously in the entire filler body, wherein
1) the filler body is disposed downstream of the light sources collectively,
2) all of the semiconductor chips of the light sources are surrounded in the lateral direction by a reflector filler at least in places, the reflector filler is formed from a silicone as a matrix material into which reflective particles are embedded,
3) the filler body is disposed downstream of the reflector filler along a main radiation direction of the semiconductor device and is applied directly onto the reflector filler,
4) the filler body covers the entire reflector filler,
5) the first conversion element converts at most 70% of the light from the semiconductor chip of the first light source,
6) the filler body converts between 30% and 80% of the light from the semiconductor chips which emit in the blue spectral range, of the first and of the third light sources and the filler body does not absorb green and red light or only absorbs it to a negligible extent,
7) the optoelectronic semiconductor device emits white mixed light formed from light from the three light sources and from the filler body,
8) the light

Assignees

• Gärtner Christian
• Markytan Ales
• Schneider Albert
• Kaiser Stephan
• Osram Opto Semiconductors Gmbh

Inventors

• Gärtner Christian
• Markytan Ales
• Schneider Albert
• Kaiser Stephan

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/856

  Reflecting means · CPC title

• H10H20/851 Primary

  Wavelength conversion means · CPC title

• H10H20/813 Primary

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/852

  Encapsulations · CPC title