Array substrate and manufacturing method thereof
US-12185597-B2 · Dec 31, 2024 · US
US9312319B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312319-B2 |
| Application number | US-201314069589-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 1, 2013 |
| Priority date | Dec 7, 2012 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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Disclosed are an organic light emitting diode device, and a method for fabricating the same. The organic light emitting diode device comprises a non-active area formed outside an active area of a substrate; a switching thin film transistor and a driving thin film transistor at each of the pixel regions; a planarization layer on the substrate; a first electrode on the planarization layer; a bank formed in the non-active area outside each pixel region; an organic light emitting layer on the first electrode; a second electrode on an entire surface of the substrate; a first passivation layer on the substrate; an organic layer on the first passivation layer; a second passivation layer on the organic layer and the first passivation layer; a barrier film disposed to face the substrate.
Opening claim text (preview).
What is claimed is: 1. An organic light emitting diode device, comprising: a substrate divided into: an active area including a plurality of pixel regions; and a non-active area formed outside the active area; a switching thin film transistor and riving thin film transistor formed at each of the pixel regions on the substrate; a planarization layer formed on the substrate including the switching thin film transistor and the driving thin film transistor, the planarization layer comprising a moisture blocking portion at the non-active area of the substrate, the moisture blocking portion comprising a same material as the planarization layer, the planarization layer being configured to absorb moisture in a direction up to the moisture blocking portion; a first electrode formed on the planarization layer, and connected to a drain electrode of the driving thin film transistor; a bank formed in the non-active area outside each pixel region of the substrate including the first electrode; an organic light emitting layer formed on the first electrode, and provided for each pixel region in a separated manner; and a second electrode formed on an entire surface of the substrate including the organic light emitting layer. 2. The organic light emitting diode device of claim 1 , wherein the moisture blocking portion is formed in at least one in number, along an edge region of the non-active area of the substrate. 3. The organic light emitting diode device of claim 1 , wherein the moisture blocking portion is formed at the planarization layer corresponding to driving circuit lines, in the non-active area of the substrate. 4. The organic light emitting diode device of claim 3 , wherein the moisture blocking portion is formed at the planarization layer positioned above a driving circuit line to which a direct current is applied, among the gate driving circuit lines. 5. The organic light emitting diode device of claim 1 , wherein an auxiliary electrode pattern, electrically connected to the first electrode, is formed on the planarization layer positioned in the non-active area of the substrate. 6. The organic light emitting diode device of claim 1 , wherein the substrate comprises one of: a glass substrate, a flexible glass substrate, and a plastic substrate. 7. The organic light emitting diode device of claim 1 , further comprising a first passivation layer completely covering the second electrode. 8. The organic light emitting diode device of claim 1 , further comprising: an organic layer over the first passivation layer; and a second passivation layer completely covering the organic layer. 9. The organic light emitting diode device of claim 1 , further comprising an auxiliary electrode pattern between and directly contacting the planarization layer and the second electrode. 10. The organic light emitting diode device of claim 1 , further comprising an auxiliary electrode pattern between and directly contacting the planarization layer and the second electrode. 11. An organic light emitting diode device, comprising: a substrate divided into: an active area including a plurality of pixel regions; and a non-active area formed outside the active area; a switching thin film transistor and a driving thin film transistor at each of the pixel regions on the substrate; a planarization layer on the substrate including the switching thin film transistor and the driving thin film transistor, the planarization layer comprising a moisture blocking portion at the non-active area of the substrate, the moisture blocking portion of the planarization layer comprising a same material as the planarization layer, the planarization layer being configured to absorb moisture in a direction up to the moisture blocking portion the planarization layer in the active area of the substrate being separated from the planarization layer the non-active area of the substrate by the moisture blocking portion; a first electrode on the planarization layer, and connected to a drain electrode of the driving thin film transistor; a bank in the non-active area outside each pixel region of the substrate including the first electrode; an organic light emitting layer on the first electrode, and provided for each pixel region in a separated manner; and a second electrode on an entire surface of the substrate including the organic light emitting layer. 12. The organic light emitting diode device of claim 11 , wherein the moisture blocking portion is formed in at least one in number, along an edge region of the non-active area of the substrate. 13. The organic light emitting diode device of claim 11 , wherein the moisture blocking portion is formed at the planarization layer corresponding to driving circuit lines, in the non-active area of the substrate. 14. The organic light emitting diode device of claim 13 , wherein the moisture blocking portion is formed at the planarization layer positioned above a driving circuit line to which a direct current is applied, among the gate driving circuit lines. 15. The organic light emitting diode device of claim 11 , wherein an auxiliary electrode pattern, electrically connected to the first electrode, is formed on the planarization layer positioned in the non-active area of the substrate. 16. The organic light emitting diode device of claim 11 , wherein the substrate comprises one of: a glass substrate, a flexible glass substrate, and a plastic substrate. 17. The organic light emitting diode device of claim 11 , further comprising a first passivation layer completely covering the second electrode. 18. The organic light emitting diode device of claim 11 , further comprising: an organic layer over the first passivation layer; and a second passivation layer completely covering the organic layer.
comprising structures specially adapted for lowering the resistance · CPC title
multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title
the pixel elements being TFTs · CPC title
Manufacture or treatment · CPC title
characterised by the compositions or shapes of the interlayer dielectrics · CPC title
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