Image sensor
US-12094907-B2 · Sep 17, 2024 · US
Solid-state imaging device and method for manufacturing solid-state imaging device
US9312296B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312296-B2 |
| Application number | US-201414483464-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2014 |
| Priority date | Oct 30, 2013 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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Abstract
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A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: a plurality of photoelectric conversion devices disposed on a semiconductor layer; a dopant layer disposed on the semiconductor layer where the photoelectric conversion devices are arrayed, and including dopant having conductivity type reverse to a charge accumulating region of the photoelectric conversion device; a low concentration region disposed inside the dopant layer, and having dopant concentration lower th…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9312296B2 cover?
- A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conduct…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F39/813. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).