Composition for producing a filter material for radiation, method for producing a composition for a filter material, material for filtering radiation, and an optoelectronic device comprising the material

Patent metadata

Field	Value
Publication number	US-9310538-B2
Application number	US-201013379257-A
Country	US
Kind code	B2
Filing date	Jun 30, 2010
Priority date	Jul 6, 2009
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Composition for producing a filter material for radiation includes a silicone and at least one dye dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength of 400 nm to 700 nm, and has a relative transmission of greater than 50% for radiation of the wavelength of 850 nm to 1025 nm.

First claim

The invention claimed is:

1. An optoelectronic device which emits or absorbs electromagnetic radiation of a wavelength from a wavelength range of 850 nm to 1025 nm in operation, comprising
a layer or a component is arranged in a beam path of the device, the layer or the component is directly arranged on the optoelectronic device, the layer or the component comprises a material that filters radiation, and the material is obtained by curing a composition consisting of:
a silicone block polymer consisting of dialkyl silicone blocks and regions having arylalkyl or diaryl main chain elements,
wherein the silicone is thermally cured in a range of 60° C. to 180° C., and
one or more dyes dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength between 400 nm to 700 nm, and a relative transmission of greater than 50% for radiation of the wavelength between 850 nm and 1025 nm at the thickness in a range of 1 μm to 2 mm, and
wherein the composition is free of solvents.

2. The optoelectronic device according to claim 1 , having a relative transmission of the composition which increases from less than 20% at 700 nm to greater than 50% at 850 nm, for radiation of the wavelength between 700 nm to 850 nm.

3. The optoelectronic device according to claim 1 , wherein the dye is homogeneously distributed in the silicone.

4. The optoelectronic device according to claim 1 , wherein the dye is present as particles of less than 200 μm.

5. The optoelectronic device according to claim 1 , wherein the at least one dye is selected from the group consisting of Solvent Yellow 179, Solvent Yellow 93, Solvent Yellow 114, Solvent Orange 60, Solvent Orange 107, Solvent Red 179, Solvent Red 135, Solvent Red 111, Solvent Red 195, Solvent Red 52, Solvent Violet 36, Solvent Violet 13, Solvent Blue 97, Solvent Blue 104, Solvent Green 3 and Solvent Green 28.

6. The optoelectronic device according to claim 5 , wherein the at least one dye comprises one dye from each of groups I to III:
I) Solvent Yellow 179, Solvent Yellow 93, Solvent Yellow 114, Solvent Orange 60, Solvent Orange 107, Solvent Red 179, Solvent Red 135, Solvent Red 111, Solvent Red 195 and Solvent Red 52,
II) Solvent Violet 36, Solvent Violet 13, Solvent Blue 97 and Solvent Blue 104,
III) Solvent Green 3 and Solvent Green 28.

7. The optoelectronic device according to claim 1 , wherein the layer or the component is a daylight filter.

8. The optoelectronic device according to claim 1 , further comprises: a first electrical contact and a dielectric, and
wherein the layer or the component together with the first electrical contact and the dielectric are arranged side by side and in one plane to each other.

9. The optoelectronic device according to claim 1 , wherein the optoelectronic device is a photodiode,
the layer or the component and a first electrical contact are disposed on a highly first p-doped zone,
the first p-doped zone is surrounded at its lateral surfaces, and also from the underside, by a second p-doped zone,
the second p-doped zone is surrounded at its lateral surfaces and also toward the underside, by a first n-doped zone,
the first n-doped zone is placed on a highly second n-doped zone, and the highly second n-doped zone is disposed on a second electrical contact.

Assignees

• Hohn Klaus
• Schumann Michael
• Sossenheimer Dirk
• Osram Opto Semiconductors Gmbh

Inventors

• Hohn Klaus
• Schumann Michael
• Sossenheimer Dirk

Classifications

• G02B5/223 Primary

  containing organic substances, e.g. dyes, inks or pigments · CPC title

• G02B5/204

  in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces (for use with wavelengths longer than the infrared light H01Q15/0006) · CPC title

• G02B5/208 Primary

  for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation · CPC title

• G02B5/207

  comprising semiconducting materials · CPC title

• C09D183/04

  Polysiloxanes · CPC title