Sensor structure for sensing pressure waves and ambient pressure

Patent metadata

Field	Value
Publication number	US-9309105-B2
Application number	US-201414198645-A
Country	US
Kind code	B2
Filing date	Mar 6, 2014
Priority date	Mar 6, 2014
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive layer arranged on an opposite side of the electrode element from the first conductive layer. The first conductive layer and the second conductive layer may form a chamber. The pressure in the chamber may be lower than the pressure outside of the chamber.

First claim

What is claimed is:

1. A sensor structure, comprising:
a support structure having a first side;
a first electrically conductive layer formed on the first side of the support structure;
an electrode element arranged over the first conductive layer; and

a second electrically conductive layer arranged on an opposite side of the electrode element from the first electrically conductive layer;
wherein a portion of the first electrically conductive layer and a portion of the second electrically conductive layer form a first chamber where the pressure in the first chamber is lower than the pressure outside the first chamber and a further portion of the first electrically conductive layer and a portion of the electrode element form a second chamber where the pressure in the second chamber is lower than the pressure outside the second chamber.

2. The sensor structure of claim 1 , further comprising:
a first spacer layer formed over a portion of the first electrically conductive layer; a second spacer layer formed over a portion of the second electrically conductive layer;
a first pillar structure arranged in the first chamber between the first electrically conductive layer and the second electrically conductive layer; and
a second pillar structure arranged in the second chamber between the first electrically conductive layer and the electrode element.

3. The sensor structure of claim 2 ,
wherein the electrode element is at least partially arranged in the first chamber.

4. The sensor structure of claim 2 ,
wherein the pressure in the first chamber is substantially a vacuum pressure and the pressure in the second chamber is substantially a vacuum pressure.

5. The sensor structure of claim 2 ,
wherein the first spacer layer is arranged to fix the first electrically conductive layer to the electrode element and the second spacer layer is arranged to fix the second electrically conductive layer to the electrode element.

6. The sensor structure of claim 2 ,
wherein the first pillar structure is configured to electrically couple the first electrically conductive layer to the second electrically conductive layer.

7. The sensor structure of claim 2 ,
wherein the first pillar structure intersects the first chamber.

8. The sensor structure of claim 2 ,
wherein the second pillar structure is configured to electrically isolate the first electrically conductive layer from the electrode element.

9. The sensor structure of claim 2 ,
wherein the second pillar structure intersects the second chamber.

10. The sensor structure of claim 2 , further comprising:
a cavity formed in the support structure; and
a void formed through the first electrically conductive layer, the first spacer layer, the electrode element, the second spacer layer, and the second electrically conductive layer.

11. The sensor structure of claim 10 ,
wherein at least a portion of the first electrically conductive layer is suspended across the cavity in the support structure.

12. The sensor structure of claim 10 ,
wherein the void is configured to electrically isolate a portion of the sensor structure containing the first chamber from a portion containing the second chamber.

13. The sensor structure of claim 1 ,
wherein the sensor structure comprises a micro-electro-mechanical system.

14. A sensor structure arrangement, comprising:
a sensor structure comprising:
a support structure having a first side;
a first electrically conductive layer formed on the first side of the support structure;
an electrode element arranged over the first conductive layer; and

a second electrically conductive layer arranged on an opposite side of the electrode element from the first electrically conductive layer;
wherein a portion of the first electrically conductive layer and a portion of the second electrically conductive layer form a first chamber where the pressure in the first chamber is lower than the pressure outside the first chamber and a further portion of the first electrically conductive layer and a portion of the electrode element form a second chamber where the pressure in the second chamber is lower than the pressure outside the second chamber; and

a circuit configured to detect at least one of a signal generated by a deflection of the first chamber and a signal generated by a deformation of the second chamber.

Assignees

• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Helm Roland

Classifications

• G01L1/14

  by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators · CPC title

• H04R2201/003

  Mems transducers or their use · CPC title

• G01L13/025

  using diaphragms · CPC title

• G01L9/0041

  Transmitting or indicating the displacement of flexible diaphragms · CPC title

• G01L9/0072

  using variations in capacitance · CPC title