Electronic device including transistor and method of operating the same

Patent metadata

Field	Value
Publication number	US-9306544-B2
Application number	US-201313789884-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Aug 16, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

First claim

What is claimed is:

1. An electronic device comprising:
a first transistor having a normally-on characteristic;
a second transistor connected to the first transistor, the second transistor having a normally-off characteristic, the second transistor having a source;
a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor, the constant voltage application unit being between the gate of the first transistor and the source of the second transistor; and
a switching unit configured to apply a switching signal to the second transistor,
wherein the constant voltage application unit includes,
a constant current source connected to the gate of the first transistor, and including a voltage generator and at least one third transistor, and
a diode connected between the constant current source and the gate of the first transistor, and

wherein the electronic device is configured to apply the constant voltage to the gate of the first transistor by using the constant current source and the diode, the constant voltage corresponding to a forward direction voltage drop of the diode.

2. The electronic device of claim 1 , wherein the first transistor is a high electron mobility transistor (HEMT).

3. The electronic device of claim 2 , wherein the first transistor is a nitride based HEMT.

4. The electronic device of claim 3 , wherein the first transistor includes a gallium nitride based material.

5. The electronic device of claim 1 , wherein the second transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET).

6. The electronic device of claim 5 , wherein the second transistor is a silicon (Si) based MOSFET.

7. The electronic device of claim 1 , wherein the first transistor and the second transistor are connected to each other in a cascode configuration.

8. The electronic device of claim 1 , wherein,
an anode of the diode is connected to the gate of the first transistor, and
a cathode of the diode is connected to the source of the second transistor.

9. The electronic device of claim 1 , wherein the diode is a Schottky diode.

10. The electronic device of claim 1 , wherein a semiconductor material of the diode is the same as a semiconductor material of the first transistor.

11. The electronic device of claim 1 , wherein the diode includes a gallium nitride based material.

12. The electronic device of claim 1 , further comprising:
a substrate,
wherein the diode and the first transistor are on the substrate.

13. The electronic device of claim 12 , wherein the first transistor includes:
a first semiconductor layer formed of a first semiconductor material on the substrate;
a second semiconductor layer on a first region of the first semiconductor layer and formed of a second semiconductor material that induces a two-dimensional electron gas (2DEG) in the first semiconductor layer;
the gate on the second semiconductor layer; and
a source and a drain at both sides of the gate, and
wherein the diode includes,
a third semiconductor layer on a second region of the first semiconductor layer and formed of the second semiconductor material;
an anode forming a Schottky contact with the third semiconductor layer; and
a cathode spaced apart from the anode.

14. The electronic device of claim 1 , wherein
the constant voltage application unit includes a plurality of diodes, and
the plurality of diodes of the constant voltage application unit are connected between the constant current source of the constant voltage application unit and the gate of the first transistor.

15. The electronic device of claim 1 , wherein,
the electronic device includes a semiconductor device part and a driving circuit part,
the semiconductor device part includes the first and second transistors, and the driving circuit part includes the switching unit and at least a portion of the constant voltage application unit.

16. The electronic device of claim 15 , wherein,
the constant current source is included in the driving circuit part, and
the diode is included in the semiconductor device part.

17. The electronic device of claim 15 , wherein,
the constant current source and the diode are included in the driving circuit part.

18. A power device including the electronic device of claim 1 .

19. An electronic device comprising:
a HEMT having a normally-on characteristic;
a FET connected to the HEMT, the FET having a normally-off characteristic, the FET having a source;
a constant current source connected to a gate of the HEMT, and including a voltage generator and at least one transistor;
a diode connected between the constant current source and the gate of the HEMT; and
a switching unit configured to apply a switching signal to the FET, wherein
the electronic device is configured to apply a constant voltage to the gate of the HEMT by using the constant current source and the diode, the constant voltage corresponding to a forward direction voltage drop of the diode.

20. The electronic device of claim 19 , wherein the HEMT includes a gallium nitride based material.

21. The electronic device of claim 19 , wherein the diode includes a gallium nitride based material.

22. The electronic device of claim 19 , further comprising:
a substrate,
wherein the HEMT and the diode are on the substrate.

23. The electronic device of claim 19 , wherein the FET is a silicon (Si) based MOSFET.

24. The electronic device of claim 19 , wherein the HEMT and the FET are connected to each other in a cascode configuration.

25. A method of operating an electronic device including a first transistor having a normally-on characteristic and a second transistor connected to the first transistor and having a normally-off characteristic, the method comprising:
applying a constant voltage to a gate of the first transistor to increase a voltage between the gate and a source of the first transistor, the constant voltage being applied to the gate of the first transistor by a constant voltage application unit, the constant voltage application unit being between the gate of the first transistor and a source of the second transistor, and the constant voltage application unit including,
a constant current source connected to the gate of the first transistor, and including a voltage generator and at least one third transistor, and
a diode connected between the constant current source and the gate of the first transistor; and

applying a switching signal to the second transistor while the constant voltage is applied to the gate of the first transistors;
wherein the constant voltage is applied to the gate of the first transistor using the constant current source and the diode; and
wherein the constant voltage corresponds to a forward direction voltage drop of the diode.

26. The method of claim 25 , wherein
the applying the constant voltage includes applying the constant voltage to the gate of the first transistor by using the constant current source and the diode.

27. The method of claim 25 , wherein
an anode of the diode is connected to the gate of the first transistor, and
a cathode of the diode is connected to the source of the second transistor.

28. The method of claim 25 , wherein the diode is a Schottky diode.

29. The method of claim 25 , wherein the first transistor is a HEMT.

30. The

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jeon Woo-Chul
• Park Ki-Yeol
• Park Young-Hwan
• Shin Jai-Kwang
• Oh Jae-Joon

Classifications

• H10D89/00

  Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00 · CPC title

• H10D30/47 Primary

  having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] · CPC title

• H03K3/012 Primary

  Modifications of generator to improve response time or to decrease power consumption · CPC title

• H03K2017/6875

  using self-conductive, depletion FETs · CPC title

• H03K17/6871 Primary

  the output circuit comprising more than one controlled field-effect transistor · CPC title