Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9306079-B2
Application number	US-201314054110-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Oct 17, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a multilayer film comprising an oxide semiconductor layer and an oxide layer;
a source electrode and a drain electrode in contact with the oxide layer; and
a gate electrode overlapping with the oxide semiconductor layer with a gate insulating film therebetween,
wherein a thickness of the multilayer film is greater than or equal to 1/50 and less than or equal to 50 times as large as a curvature radius of a side s…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Suzawa Hideomi

Classifications

• H10P95/90

  Electricity · mapped topic

• H10P50/69

  Electricity · mapped topic

• H10P14/3434

  Electricity · mapped topic

• H10P14/3426

  Electricity · mapped topic

• H10P14/24

  Electricity · mapped topic