Semiconductor device
US-12057459-B2 · Aug 6, 2024 · US
Semiconductor device
US9306074B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9306074-B2 |
| Application number | US-201414293484-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 2, 2014 |
| Priority date | Jun 5, 2013 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; and a source electrode and a drain electrode electrically connected to the oxide semiconductor film, wherein a first opening portion is pro…
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Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9306074B2 cover?
- Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, t…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6734. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).