Semiconductor device having dual work function gate structure and electronic device having the same

Patent metadata

Field	Value
Publication number	US-9306022-B1
Application number	US-201514739732-A
Country	US
Kind code	B1
Filing date	Jun 15, 2015
Priority date	Dec 16, 2014
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A semiconductor device includes a body including a first junction region; a pillar positioned over the body, and including a vertical channel region and a second junction region over the vertical channel region; a gate trench exposing side surfaces of the pillar; a gate dielectric layer covering the gate trench; and a gate electrode embedded in the gate trench, with the gate dielectric layer interposed therebetween. The gate electrode includes a first work function liner overlapping with the vertical channel region, and including an aluminum-containing metal nitride; a second work function liner overlapping with the second junction region, and including a silicon-containing non-metal material; and an air gap positioned between the second work function liner and the second junction region.

First claim

What is claimed:

1. A semiconductor device comprising:
a body including a first junction region;
a pillar positioned over the body and including a vertical channel region and a second junction region over the vertical channel region;
a gate trench exposing side surfaces of the pillar;
a gate dielectric layer provided in the gate trench and over a side surface of the pillar; and
a gate electrode provided in the gate trench, wherein the gate dielectric layer is interposed between the gate electrode and the gate trench,
wherein the gate electrode comprising:
a first work function liner over the vertical channel region and including an aluminum-containing metal nitride;
a second work function liner over the second junction region and including a silicon-containing non-metal material; and
an air gap positioned between the second work function liner and the second junction region.

2. The semiconductor device according to claim further comprising:
a bit line trench formed in the body;
a bit line provided in the bit line trench and electrically coupled to the first junction region;
a bit line capping layer covering a top surface and side surfaces of the bit line; and
a memory element electrically coupled to the second junction region.

3. The semiconductor device according to claim 1 , wherein the first work function liner includes a material which has a work function higher than the second work function liner.

4. The semiconductor device according to claim 1 , wherein the first work function liner includes titanium aluminum nitride (TiAlN) and
wherein the second work function liner includes an N-type purity-doped polysilicon.

5. The semiconductor device according to claim herein the gate electrode further comprises:
a first low resistivity electrode provided over the first work function liner; and
a second low resistivity electrode over the second work function liner.

6. The semiconductor device according to claim 5 , wherein the second low resistivity electrode includes a material which is non-reactive with the second work function liner.

7. The semiconductor device according to claim 5 , wherein the first low resistivity electrode includes a fluorine-free material which is non-reactive with the second work function liner.

8. The semiconductor device according to claim 1 , wherein the gate electrode comprises:
a main part; and
a pair of first and second branch parts from the main part,
wherein the main part extends in a first direction,
wherein each of the pair of first and second branch parts extends in a second direction different from the first direction, and
wherein the main part, the first branch part, and the second branch part are formed over first, second, and third side surface of the pillar, respectively.

9. The semiconductor device according to claim 1 , wherein the gate electrode further comprises:
a first low resistivity electrode covering a side surface of the first work function liner;
a second low resistivity electrode covering a side surface of the second work function liner; and
an upper barrier positioned between the second work function liner and the second low resistivity electrode.

10. The semiconductor device according to claim 9 , wherein the first low resistivity electrode includes a material which is non-reactive with the second work function liner, and
wherein the second low resistivity electrode includes a material which is reactive with the second work function liner.

11. The semiconductor device according to claim 1 , wherein the gate electrode further comprises:
a first low resistivity electrode covering a side surface of the first work function liner;
a lower barrier positioned between the first work function liner and the first low resistivity electrode;
a second low resistivity electrode covering a side surface of the second work function liner; and
an upper barrier positioned between the second work function liner and the second low resistivity electrode.

12. The semiconductor device according to claim 11 , wherein the first low resistivity electrode and the second low resistivity electrode include materials which are reactive with the second word function liner.

13. A semiconductor device comprising:
a body including a first junction region;
a bit line trench formed in the body;
a bit line provided in the bit line trench and electrically coupled to the first junction region;
a bit line capping layer provided over a top surface and over side surfaces of the bit line;
a pair of first and second pillars positioned over the body and including vertical channel regions and second junction regions over the vertical channel regions;
a gate trench having main trench which exposes a space between the first pillar and the second pillar, and branch trenches which expose side surfaces of the first and second pillars;
a pair of first and second gate electrodes provided over the side surfaces of the first and second pillars exposed by the branch trenches, respectively; and
memory elements electrically coupled with the second junction regions, respectively,
wherein each of the first and second gate electrodes comprising:
a first work function liner over a side surface of the vertical channel region and including an aluminum-containing metal nitride;
a second work function liner over a side surface of the second junction region and including a silicon-containing non-metal material; and
an air gap positioned between the second work function liner and the second junction region.

14. The semiconductor device according to claim 13 , wherein each of the first and second gate electrodes comprises:
a main part positioned between the first pillar and the second pillar; and
a pair of first and second branch parts extending from the main part,
wherein the main part extends in a first direction,
wherein each of the pair of first and second branch parts extends in a second direction different from the first direction,
wherein the main part, the first branch part, and the second branch part are formed over the side surfaces of each of the first and second pillars.

15. The semiconductor device according to claim 14 , wherein the side surfaces comprises:
a first side surface over the main part;
a second side surface over the first branch part; and
a third side surface over the second branch part.

16. The semiconductor device according to claim 15 , each of the first and second pillars further comprising:
a fourth side surface; and
an isolation layer contacting the fourth side surface.

17. The semiconductor device according to claim 13 , wherein the first work function liner includes titanium aluminum nitride (TiAlN), and
wherein the second work function liner includes an N-type impurity-doped polysilicon.

18. The semiconductor device according to claim 13 , wherein each of the first and second gate electrodes further comprises:
a first low resistivity electrode over the first work function liner; and
a second low resistivity electrode over the second work function liner.

19. The semiconductor device according to claim 13 , wherein each of the first and second gate electrodes further comprises:
a first low resistivity electrode over the first work function liner;
a second low resistivity electrode over the second work function liner; and
an upper barrier positioned between the second work function liner and the second low resistivity electrode.

20. The semiconductor device according to claim 13 , wherein each of the first

Assignees

• Sk Hynix Inc

Inventors

• Oh Tae-Kyung

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10D64/0113

  the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10W10/021

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title