Semiconductor device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9306008-B2
Application number	US-201414207880-A
Country	US
Kind code	B2
Filing date	Mar 13, 2014
Priority date	Sep 3, 2013
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a compound semiconductor layer comprising at least one element from Groups III through VI;
a dielectric layer disposed on the compound semiconductor layer;
an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer, the oxygen gettering layer comprising a material having a higher affinity for oxygen than a material of the compound semiconductor layer, the oxygen gettering layer including at least one of a doped Zr, a metal sulfide, and a metal nitride; and
an electrode on the dielectric layer, the dielectric layer being between the electrode and the oxygen gettering layer.

2. The semiconductor device of claim 1 , wherein the doped Zr comprises at least one of Y-doped Zr and Al-doped Zr.

3. The semiconductor device of claim 1 , wherein the metal sulfide comprises at least one of HfS 2 , TiS 2 , LaS x , and SiS 2 .

4. The semiconductor device of claim 1 , wherein the metal nitride comprises at least one of AlN, GaN, HfN, and SiN.

5. The semiconductor device of claim 1 , wherein a thickness of the oxygen gettering layer is equal to or less than about 10 nm.

6. The semiconductor device of claim 1 , wherein the dielectric layer comprises at least one of HfO 2 , Al 2 O 3 , La 2 O 3 , ZrO 2 , HfSiO, HfSiON, HfLaO, LaAlO, and SrTiO.

7. The semiconductor device of claim 1 , further comprising:
a passivation layer interposed between the compound semiconductor layer and the oxygen gettering layer.

8. The semiconductor device of claim 7 , wherein the passivation layer comprises at least one of S, N, F, Cl and H formed on a surface of the compound semiconductor layer.

9. A method of fabricating a semiconductor device, the method comprising:
forming an oxygen gettering layer on a compound semiconductor layer, the compound semiconductor layer comprising at least one element from Groups III through VI, the oxygen gettering layer comprising a material having a higher affinity for oxygen than a material of the compound semiconductor layer, the oxygen gettering layer including at least one of a doped Zr, a metal sulfide, and a metal nitride;
forming a dielectric layer on the oxygen gettering layer; and
forming an electrode on the dielectric layer, the dielectric layer being between the electrode and the oxygen gettering layer.

10. The method of claim 9 , wherein the doped Zr comprises at least one of Y-doped Zr and Al-doped Zr.

11. The method of claim 9 , wherein the metal sulfide comprises at least one of HfS 2 , TiS 2 , LaS x , and SiS 2 .

12. The method of claim 9 , wherein the metal nitride comprises at least one of AlN, GaN, HfN, and SiN.

13. The method of claim 9 , wherein the forming an oxygen gettering layer includes using an atomic layer deposition (ALD) method, a chemical vapor deposition (CVD) method, or a sputtering method.

14. The method of claim 13 , further comprising:
performing a thermal treatment on at least one of the oxygen gettering layer and the dielectric layer.

15. The method of claim 9 , further comprising:
forming a passivation layer on a surface of the compound semiconductor layer before the forming an oxygen gettering layer.

16. The method of claim 15 , wherein the passivation layer comprises at least one of S, N, F, Cl and H formed on the surface of the compound semiconductor layer.

17. The semiconductor device of claim 1 , wherein the oxygen gettering layer is directly on the compound semiconductor layer.

18. The semiconductor device of claim 1 , wherein the oxygen gettering layer has a higher affinity for oxygen than the compound semiconductor layer and the dielectric layer.

Assignees

• Lee Dong-Soo
• Lee Myoung-Jae
• Cho Seong-Ho
• Uddin Mohammad Rakib
• Seo David
• Yang Moon-Seung
• Lee Sang-Moon
• Lee Sung-Hun
• Hur Ji-Hyun
• Hwang Eui-Chul
• Samsung Electronics Co Ltd

Inventors

• Lee Dong-Soo
• Lee Myoung-Jae
• Cho Seong-Ho
• Uddin Mohammad Rakib
• Seo David
• Yang Moon-Seung
• Lee Sang-Moon
• Lee Sung-Hun
• Hur Ji-Hyun
• Hwang Eui-Chul

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title