Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
Silicon carbide semiconductor device
US9306006B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9306006-B2 |
| Application number | US-201514803435-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2015 |
| Priority date | Jul 24, 2014 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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Abstract
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There is provided a silicon carbide semiconductor device allowing for suppression of breakage of an element upon short circuit of load. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, a source electrode, and a drain electrode. The silicon carbide layer includes a drift region, a body region, and a source region. The MOSFET is configured such that a relational expression of n<−0.02R onA +0.7 is established in a case where a contact width of the source region and the source electrode is represented by n (μm) in a cross section in a thickness direction of the silicon carbide layer and a migration direction of carriers in the body region and where on resistance of the MOSFET in a state in which an inversion layer is formed in a channel region is represented by R onA (mΩcm 2 ).
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon carbide semiconductor device comprising: a silicon carbide layer including a first main surface and a second main surface opposite to said first main surface, said silicon carbide layer including a first impurity region that has a first conductivity type, a second impurity region that is in contact with said first impurity region and that has a second conductivity type different from said first conductivity type, and a third impurity region t…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9306006B2 cover?
- There is provided a silicon carbide semiconductor device allowing for suppression of breakage of an element upon short circuit of load. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, a source electrode, and a drain electrode. The silicon carbide layer includes a drift region, a body region, and a source region. The MOSFET is configured such that a relationa…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10D62/405. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).