Semiconductor device having gate electrode embedded in gate trench

Patent metadata

Field	Value
Publication number	US-9305924-B2
Application number	US-201313934935-A
Country	US
Kind code	B2
Filing date	Jul 3, 2013
Priority date	Jul 12, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

Disclosed herein is a device that includes: a substrate having a gate trench; a gate electrode embedded in the gate trench with an intervention of a gate insulation film; and an embedded insulation film embedded in the gate trench. The substrate includes a first impurity diffusion region in contact with the embedded insulation film and a second impurity diffusion region in contact with the gate insulation film. The gate trench including a first trench portion extending in a first direction and second and third trench portions branching from the first trench portion and extending in a second direction that crosses the first direction. The gate electrode including first, second and third electrode portions embedded in the first, second and third trench portions of the gate trench, respectively. The first impurity diffusion region being sandwiched between the second and third electrode portions.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a gate trench that includes a first side surface, a second side surface facing to the first side surface and a bottom surface;
a gate insulation film covering the first side surface, the second side surface and the bottom surface of the gate trench;
a gate electrode embedded in a lower portion of the gate trench with an intervention of the gate insulation film;
an embedded insulation f…

Assignees

• Ps4 Luxco Sarl

Inventors

• Mikasa Noriaki

Classifications

• H10D89/10

  Electricity · mapped topic

• H10D30/63 Primary

  Electricity · mapped topic

• H10D30/025

  Electricity · mapped topic

• H01L27/10888

  Electricity · mapped topic

• H01L29/7827

  Electricity · mapped topic