Formation of air-gap spacer in transistor

Patent metadata

Field	Value
Publication number	US-9305835-B2
Application number	US-201414190641-A
Country	US
Kind code	B2
Filing date	Feb 26, 2014
Priority date	Feb 26, 2014
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

Embodiments of present invention provide a method of forming air spacers in a transistor structure. The method includes forming a gate structure of a transistor on top of a semiconductor substrate; forming a first and a second disposable spacers adjacent to a first and a second sidewall of the gate structure; forming a first and a second conductive studs next to the first and the second disposable spacer; removing the first and second disposable spacers to create empty spaces between the first and second conductive studs and the gate structure; and preserving the empty spaces by forming dielectric plugs at a top of the empty spaces.

First claim

What is claimed is:

1. A method comprising:
providing a semiconductor substrate;
forming a first and a second gate structure of a first and a second transistor on the substrate;
forming a first and a second disposable spacer adjacent to sidewalls of said first and second gate structures respectively, said first and second disposable spacers facing each other and being between said first and second gate structures,
wherein said first and second gate structures each comprise a…

Assignees

• IBM

Inventors

• Alptekin Emre
• Sardesai Viraj
• Tran Cung
• Vega Reinaldo

Classifications

• H10P14/40

  Electricity · mapped topic

• H10D64/013

  Electricity · mapped topic

• H10W20/0765

  Electricity · mapped topic

• H10W20/069

  Electricity · mapped topic

• H10W20/056

  Electricity · mapped topic