Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane

Patent metadata

Field	Value
Publication number	US-9305778-B2
Application number	US-201313859250-A
Country	US
Kind code	B2
Filing date	Apr 9, 2013
Priority date	Nov 16, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

First claim

What is claimed is:

1. A metal oxide semiconductor structure including a metal oxide semiconductor having a wurtzite crystal structure, said metal oxide semiconductor having a polar surface and a non-polar surface, wherein the polar surface is treated to have a reduced surface energy compared to the same polar surface in the absence of the modification,
wherein the metal oxide semiconductor structure is grown in a non-polar direction, and
wherein lateral planes in a non-polar direction of the metal oxide semiconductor structure comprise a non-polar surface, or a non-polar surface and a polar surface.

2. The metal oxide semiconductor structure of claim 1 , wherein the metal oxide semiconductor comprises a thermally decomposed material that reduces a surface energy of a polar surface of the metal oxide semiconductor.

3. The metal oxide semiconductor structure of claim 2 , wherein the metal of the metal oxide semiconductor comprises a metal of Group II-VI in the periodic table.

4. The metal oxide semiconductor structure of claim 3 , comprising a ZnO wire grown in a non-polar direction.

5. The metal oxide semiconductor structure of claim 4 , wherein the thermally decomposed material comprises at least one of Ga and As.

6. The metal oxide semiconductor structure of claim 4 , wherein a cross-sectional shape of the ZnO wire comprises a rectangle, a diamond, or a polygon.

7. The metal oxide semiconductor structure of claim 1 , further comprising at least one of an organic material layer and an inorganic material layer formed on the polar surface of the metal oxide semiconductor, thereby having a junction structure.

8. A semiconductor device comprising the metal oxide semiconductor structure of claim 7 .

9. A semiconductor device comprising the metal oxide semiconductor structure of claim 1 .

10. A method of producing a metal oxide semiconductor crystal structure, comprising steps of:
(a) providing a substrate having a surface capable of growing a metal oxide semiconductor crystal; and
(b) growing the metal oxide semiconductor crystal which has a polar surface and a non-polar surface on the substrate in a non-polar direction by supplying a source material under a thermal chemical vapor deposition condition employing a certain temperature and a certain pressure, said source material comprising a source for forming the metal oxide semiconductor and a thermal decomposition material,
wherein the thermal decomposition material decomposes at a temperature equal to or lower than the temperature for growing the metal oxide semiconductor crystal,
wherein the metal oxide semiconductor crystal structure includes a metal oxide semiconductor having a wurtzite crystal structure, said metal oxide semiconductor having a polar surface and a non-polar surface,
wherein the polar surface of the metal oxide semiconductor crystal structure has a reduced surface energy compared to the same polar surface of a crystal structure grown under the same condition in the absence of the thermal decomposition material, and
wherein lateral planes in a non-polar direction of the metal oxide semiconductor structure comprise a non-polar surface, or a non-polar surface and a polar surface.

11. The method of claim 10 , wherein the ZnO growth temperature is about 800° C.- 1200° C.

12. The method of claim 10 , wherein the thermal decomposition material is thermally decomposed at about 500° C.- 910° C.

13. The method of claim 10 , wherein the thermal decomposition material comprises GaAs.

14. The method of claim 10 , wherein a mole ratio of the thermal decomposition material to ZnO is about 0.01-100 mol %.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Young-Jun
• Sohn Jung-Inn
• Cha Seung-Nam
• Ku Ji-Yeon

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3466 Primary

  Crystal orientation · CPC title