Transparent conductive film and manufacturing method therefor

US9305680B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9305680-B2
Application numberUS-201113976839-A
CountryUS
Kind codeB2
Filing dateDec 16, 2011
Priority dateDec 27, 2010
Publication dateApr 5, 2016
Grant dateApr 5, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a transparent conductive film which is excellent in dotting property under a heavy load and excellent in bending resistance. Provided is a transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive residual stress of the transparent conductive layer is 0.4 to 2 GPa.

First claim

Opening claim text (preview).

The invention claimed is: 1. A transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive residual stress of the transparent conductive layer is 0.7 to 2 GPa, wherein the transparent conductive layer is formed by a sputtering method, wherein the transparent conductive layer is crystallized by heating, and a dimensional change in at least one direction in a plane of the layer with respect to a dimension before crystallization is −0.3% to −1.5%, the flexible transparent base comprises a transparent substrate film and an undercoat layer, and the undercoat layer comprises an organic substance or a mixture of an inorganic substance and an organic substance. 2. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 300 nm or less is 95% by area or more. 3. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 200 nm or less is more than 50% by area. 4. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 100 nm or less is more than 5% by area, and the maximum grain size of remaining crystals falls within a distribution range of more than 100 nm and 200 nm or less. 5. The transparent conductive film according to claim 1 , wherein the thickness of the transparent conductive layer is 10 to 100 nm.

Assignees

Inventors

Classifications

  • C23C14/024Primary

    Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence) · CPC title

  • Thermal treatment · CPC title

  • H01B5/14Primary

    comprising conductive layers or films on insulating-supports · CPC title

  • of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

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What does patent US9305680B2 cover?
The present invention relates to a transparent conductive film which is excellent in dotting property under a heavy load and excellent in bending resistance. Provided is a transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive res…
Who is the assignee on this patent?
Yamazaki Yuka, Muraoka Yoko, Machinaga Hironobu, and 3 more
What technology area does this patent fall under?
Primary CPC classification C23C14/024. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).