Finding optimal read thresholds and related voltages for solid state memory

Patent metadata

Field	Value
Publication number	US-9305658-B2
Application number	US-201414546545-A
Country	US
Kind code	B2
Filing date	Nov 18, 2014
Priority date	Jan 10, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.

First claim

What is claimed is:

1. A method, comprising:
performing a read of solid state storage, using a first iteration of a read threshold voltage that is set to a default voltage, in order to obtain a first characteristic associated with the first iteration of the read threshold voltage;
using a processor to generate a second iteration of the read threshold voltage based at least in part on the default voltage and an offset;
performing a read of the solid state storage, using the second iteration of the read threshold voltage, in order to obtain a second characteristic associated with the second iteration of the read threshold voltage;
using the processor to generate a third iteration of the read threshold voltage based at least in part on the first characteristic and the second characteristic;
performing a read of the solid state storage, using the third iteration of the read threshold voltage, in order to obtain a third characteristic associated with the third iteration of the read threshold voltage;
selecting, from (1) the first characteristic, (2) the second characteristic, and (3) the third characteristic, the two characteristics that are closest to a stored characteristic,
determining if the third characteristic is one of the two characteristics that are closest to the stored characteristic; and
in the event it is determined that the third characteristic is one of the two characteristics that are closest to the stored characteristic, using the processor to generate a fourth iteration of the read threshold voltage based at least in part on the two characteristics that are closest to the stored characteristic.

2. The method of claim 1 , wherein the first characteristic, the second characteristic, the third characteristic, and the stored characteristic include one or more of the following: a ratio of ones to zeros or a ratio of zeros to ones.

3. The method of claim 1 , wherein the first characteristic, the second characteristic, the third characteristic, and the stored characteristic include one or more of the following: a number of ones or a number of zeros.

4. The method of claim 1 further comprising: in the event it is determined that the third characteristic is not one of the two characteristics that are closest to the stored characteristic, using the processor to generate the fourth iteration of the read threshold voltage based at least in part on the offset.

5. The method of claim 4 , wherein in the event it is determined that the third characteristic is not one of the two characteristics that are closest to the stored characteristic, generation of the fourth iteration of the read threshold voltage is further based at least in part on the characteristic, from (1) the first characteristic, (2) the second characteristic, and (3) the third characteristic, that is closest to the stored characteristic.

6. A system, comprising:
a storage read interface configured to:
perform a read of solid state storage, using a first iteration of a read threshold voltage that is set to a default voltage, in order to obtain a first characteristic associated with the first iteration of the read threshold voltage;
perform a read of the solid state storage, using a second iteration of the read threshold voltage, in order to obtain a second characteristic associated with the second iteration of the read threshold voltage; and
perform a read of the solid state storage, using a third iteration of the read threshold voltage, in order to obtain a third characteristic associated with the third iteration of the read threshold voltage; and

a voltage calculator configured to:
generate the second iteration of the read threshold voltage based at least in part on the default voltage and an offset;
generate the third iteration of the read threshold voltage based at least in part on the first characteristic and the second characteristic;
select, from (1) the first characteristic, (2) the second characteristic, and (3) the third characteristic, the two characteristics that are closest to a stored characteristic,
determine if the third characteristic is one of the two characteristics that are closest to the stored characteristic; and
in the event it is determined that the third characteristic is one of the two characteristics that are closest to the stored characteristic, generate a fourth iteration of the read threshold voltage based at least in part on the two characteristics that are closest to the stored characteristic.

7. The system of claim 6 , wherein the first characteristic, the second characteristic, the third characteristic, and the stored characteristic include one or more of the following: a ratio of ones to zeros or a ratio of zeros to ones.

8. The system of claim 6 , wherein the first characteristic, the second characteristic, the third characteristic, and the stored characteristic include one or more of the following: a number of ones or a number of zeros.

9. The system of claim 6 , wherein the voltage calculator is further configured to: in the event it is determined that the third characteristic is not one of the two characteristics that are closest to the stored characteristic, generate the fourth iteration of the read threshold voltage based at least in part on the offset.

10. The system of claim 9 , wherein the voltage calculator is further configured to: in the event it is determined that the third characteristic is not one of the two characteristics that are closest to the stored characteristic, generate the fourth iteration of the read threshold voltage further based at least in part on the characteristic, from (1) the first characteristic, (2) the second characteristic, and (3) the third characteristic, that is closest to the stored characteristic.

11. A computer program product, the computer program product being embodied in a non-transitory computer readable storage medium and comprising computer instructions for:
performing a read of solid state storage, using a first iteration of a read threshold voltage that is set to a default voltage, in order to obtain a first characteristic associated with the first iteration of the read threshold voltage;
generating a second iteration of the read threshold voltage based at least in part on the default voltage and an offset;
performing a read of the solid state storage, using the second iteration of the read threshold voltage, in order to obtain a second characteristic associated with the second iteration of the read threshold voltage;
generating a third iteration of the read threshold voltage based at least in part on the first characteristic and the second characteristic;
performing a read of the solid state storage, using the third iteration of the read threshold voltage, in order to obtain a third characteristic associated with the third iteration of the read threshold voltage;
selecting, from (1) the first characteristic, (2) the second characteristic, and (3) the third characteristic, the two characteristics that are closest to a stored characteristic,
determining if the third characteristic is one of the two characteristics that are closest to the stored characteristic; and
in the event it is determined that the third characteristic is one of the two characteristics that are closest to the stored characteristic, generating a fourth iteration of the read threshold voltage based at least in part on the two characteristics that are closest to the stored characteristic.

12. The computer program product of claim 11 , wherein the first characteristic, the second characteristic, the third characteristic, and the stored characteristic include one or more of the following: a ratio of ones to zeros or a ratio of zeros to ones.

Assignees

• Sk Hynix Memory Solutions Inc

Inventors

• Tang Xiangyu
• Zeng Lingqi
• Bellorado Jason
• Lee Frederick K H
• Subramanian Arunkumar

Classifications

• G11C16/26 Primary

  Sensing or reading circuits; Data output circuits · CPC title