Junction field-effect floating gate memory switch with thin tunnel insulator

Patent metadata

Field	Value
Publication number	US-9305650-B2
Application number	US-201414181427-A
Country	US
Kind code	B2
Filing date	Feb 14, 2014
Priority date	Feb 14, 2014
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A dense binary memory switch device combines the function of a pass transistor and a memory cell and has low programming and operation voltages. The device includes a charge storage region coupled to a gate electrode through a gate dielectric layer and to a channel region through a tunneling dielectric layer. The charge storage region includes a floating gate charged by tunneled carriers from the channel region. Charge retention is facilitated by the band offset between the charge storage region and the tunneling dielectric layer.

First claim

What is claimed is:

1. A field-effect floating gate memory device comprising:
a channel region having a conductivity type and adjoining an electrically insulating substrate;
doped source and drain regions operatively associated with and having the same conductivity type as the channel region;
a control gate;
a floating gate for storing carriers from the channel region, the floating gate being positioned between the channel region and the control gate, the floating gate havin…

Assignees

• IBM

Inventors

• Gopalakrishnan Kailash
• Hekmatshoartabari Bahman

Classifications

• G11C16/10 Primary

  Physics · mapped topic

• G11C16/0416

  Physics · mapped topic

• H10D86/201 Primary

  Electricity · mapped topic

• H10D64/035

  Electricity · mapped topic

• H10D30/6891

  Electricity · mapped topic