Variable resistance element and method of manufacturing the same
US-9006698-B2 · Apr 14, 2015 · US
Variable resistive element, storage device and driving method thereof
US9305645B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9305645-B2 |
| Application number | US-201314044076-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2013 |
| Priority date | Nov 15, 2012 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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Abstract
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An element according to an embodiment can transit between at least two states including a low-resistance state and a high-resistance state. The element comprises a first electrode, a second electrode, a first layer and a second layer. The first electrode includes metal elements. The first layer is located between the first electrode and the second electrode while contacting with the first electrode. The second layer is located between the first layer and the second electrode. At the low-resistance state, a density of the metal elements in the first layer is higher than that of the metal elements in the second layer. The density of the metal elements in the first layer at the low-resistance state is higher than that of the metal elements in the first layer at the high-resistance state. A relative permittivity of the second layer is higher than a relative permittivity of the first layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A variable resistive element which is able to transit between at least two states including a low-resistance state and a high-resistance state, the variable resistive element comprising: a first electrode including metal elements; a second electrode; a first variable resistive layer located between the first electrode and the second electrode; and a second variable resistive layer located between the first variable resistive layer and the second electr…
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Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9305645B2 cover?
- An element according to an embodiment can transit between at least two states including a low-resistance state and a high-resistance state. The element comprises a first electrode, a second electrode, a first layer and a second layer. The first electrode includes metal elements. The first layer is located between the first electrode and the second electrode while contacting with the first elect…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0069. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).