Cu alloy film for display device and display device

Patent metadata

Field	Value
Publication number	US-9305470-B2
Application number	US-201113810949-A
Country	US
Kind code	B2
Filing date	Jul 21, 2011
Priority date	Jul 21, 2010
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a display device, said film having a stacked structure including a first layer (Y) composed of a Cu alloy containing, in total, 1.2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb and Mn, and a second layer (X) composed of pure Cu or a Cu alloy having Cu as a main component and an electrical resistivity lower than that of the first layer (Y). A part of or the whole first layer (Y) is directly in contact with an oxygen-containing insulator layer ( 27 ), and in the case where the first layer (Y) contains Zn or Ni, the thickness of the first layer (Y) is 10-100 nm, and in the case where the first layer (Y) does not contain Zn and Ni, the thickness of the first layer (Y) is 12-100 nm. The present invention also relates to a display device having the Cu alloy film.

First claim

The invention claimed is:

1. A Cu alloy film, comprising:
a stacked structure comprising
a first layer Y comprising a Cu alloy, wherein the Cu alloy comprises at least one element selected from the group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn in a total content of 1.2 to 20 atomic percent; and
a second layer X comprising pure Cu or a Cu alloy mainly comprising Cu, the Cu alloy having a lower electrical resistivity than the first layer Y,
wherein
the Cu alloy film is obtained after a heat treatment,
at least a part of the first layer Y is in direct contact with an oxygen-comprising insulator layer formed on a substrate,
wherein the first layer Y is free of oxygen
when the first layer Y comprises Zn or Ni, the first layer Y has a thickness of 10 nm or more and 100 nm or less, and
when the first layer Y comprises no Zn or Ni, the first layer Y has a thickness of 12 nm or more and 100 nm or less.

2. The Cu alloy film of claim 1 , wherein the thickness of the first layer Y is 60% or less of an entire thickness of the Cu alloy film.

3. The Cu alloy film of claim 1 , wherein
the first layer Y comprises Mn,
the oxygen-comprising insulator layer comprises silicon oxide or silicon oxynitride formed by a CVD method, and
formula (1) is satisfied:
2≦{[O]×[Mn]×1.6}/([O]+[N])  (1)

where
[Mn] represents an Mn content of the first layer Y, in atomic percent,
[O] represents an oxygen content of the oxygen-comprising insulator layer, in atomic percent, and
[N] represents a nitrogen content of the oxygen-comprising insulator layer, in atomic percent.

4. The Cu alloy film of claim 1 , wherein
the first layer Y comprises Mn, and
the thickness TM of the first layer and the Mn content satisfy formula (2) :
TM≧ 230×{[Mn]×1.6} −1.2   (2)

where
TM represents the thickness of the first layer Y, in nm, and
[Mn] represents the Mn content of the first layer Y, in atomic percent.

5. The Cu alloy film of claim 1 , wherein the Cu alloy film is heat-treated at 250° C. or higher for 5 minutes or more.

6. The Cu alloy film of claim 1 , wherein the oxygen-comprising insulator layer comprises Si.

7. The Cu alloy film of claim 1 , wherein the oxide-comprising insulator layer comprises silicon oxide or silicon oxynitride.

8. The Cu alloy film of claim 1 , wherein the Cu alloy film has excellent wet etching properties.

9. A display device comprising the Cu alloy film of claim 1 .

10. The Cu alloy film of claim 1 , wherein the first layer Y comprises Zn or Ni.

11. The Cu alloy film of claim 1 , wherein the first layer Y comprises no Zn or Ni.

12. The Cu alloy film of claim 1 , wherein the second layer X comprises Cu and Ni.

13. The Cu alloy film of claim 1 , wherein the second layer X comprises Cu and Zn.

14. The Cu alloy film of claim 1 , wherein the second layer X comprises Cu and Mn.

15. The Cu alloy film of claim 1 , wherein the first layer Y comprises Mn.

16. The Cu alloy film of claim 1 , wherein the first layer Y comprises Ni.

17. The Cu alloy film of claim 1 , wherein the Cu alloy of the first layer Y comprises at least one element selected from the group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, in a total content of 4 to 12 atomic percent.

18. The Cu alloy film of claim 1 , wherein the Cu alloy of the first layer Y further comprises Fe, Co, or both.

19. The Cu alloy film of claim 1 , wherein the thickness of the first layer Y is 15% to 60% of an entire thickness of the Cu alloy film.

Assignees

• Miki Aya
• Kugimiya Toshihiro
• Terao Yasuaki
• Kobe Steel Ltd

Inventors

• Miki Aya
• Kugimiya Toshihiro
• Terao Yasuaki

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10W20/4424

  Copper alloys · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title