EUV microlithography illumination optical system and EUV attenuator for same
US-9482959-B2 · Nov 1, 2016 · US
US9304400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9304400-B2 |
| Application number | US-201113038453-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 2, 2011 |
| Priority date | Sep 30, 2008 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm 2 . The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.
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What is claimed is: 1. An illumination system, comprising: a light source configured to generate illumination light; an illumination optics comprising an optical modulation component, wherein: the modulation component comprises a displacement device configured to displace the light source; the light source is configured to pass illumination light having an etendue higher than 0.01 mm 2 into the illumination optics; the illumination optics is configured to guide the illum…
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